Effect of Stoichiometric Defects on the Raman Spectrum and Polarization Anisotropy in a Two-Dimensional CrSBr Magnetic Semiconductor
Gusenkov D.L.1,2, Chiglintsev E.O. 3,4, Chernov A.I. 3,4, Savin V.V. 1, Morgunov R.B. 1,2,4,5
1Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS, Сhernogolovka, Russia
2Sechenov First Moscow State Medical University, Ministry of Health of the Russian Federation, Moscow, Russia
3Center of Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
4Russian Quantum Center, ”Skolkovo“, Innovation Center, Moscow, Russia
5Immanuel Kant Baltic Federal University, Kaliningrad, Russia
Email: spintronics2022@yandex.ru
The two-dimensional CrSBr magnetic semiconductor is of considerable interest for spintronics. However, its functional properties critically depend on the stoichiometry and the quality of the crystal lattice. In this paper, we present studies of the optical properties of CrSBr samples characterized by different stoichiometry, bromine deficiency, and the presence of the Cr2S3 impurity phase. Raman polarization spectroscopy revealed that such defects lead to a decrease in the intensity of the main vibrational modes, their broadening and frequency shift. The results obtained demonstrate that RAMAN spectroscopy is an effective, non-destructive method for rapid assessment of the stoichiometry and quality of CrSBr crystals, which is of paramount importance for reproducibility of their magnetic and optical properties. Keywords: two-dimensional semiconductors, stoichiometry, Raman spectroscopy, X-ray fluorescence analysis.
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