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Impurity Reverse Magnetoelectric Effect in a Semiconductor Quantum Well
Russian version
Grunin A. B. 1
1Penza State University, Penza, Russia
Email: grunin.sky@yandex.ru
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A theoretical study is presented of the impurity reverse magnetoelectric effect (ME) in a semiconductor quantum well (QW) with a parabolic confinement potential containing a D(-) center (negative ion donor). Within the framework of the zero-radius potential model, in the effective mass approximation, a dispersion equation is obtained that determines the binding energy of the impurity state, analytical expressions for the impurity wave function and the dipole magnetic moment induced by an electric field for the impurity electron in the QW. Numerical analysis revealed an asymmetry in the field dependence of the dipole magnetic moment relative to the impurity coordinate due to a violation of the space-time symmetry of the nanostructure. For the positions of the D(-) center shifted relative to the plane of symmetry of the QW in the direction opposite to the electric field strength, the field dependence of the dipole magnetic moment is non-monotonic with a maximum in the paramagnetic region and a transition to the diamagnetic one. The possibility of controlling the considered ME using both fields and deliberate selective alloying is shown. Keywords: toroidal moment, asymmetric nanostructures, donor impurities, Greens function method, effective mass method, zero-radius potential model.
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