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Control of the fundamental absorption edge of GeOx thin films by thermal annealing
Russian version
Astankova K. N. 1, Kislukhin N.A. 1,2, Samus A. D.3, Matsynin A. А.3,4, Komogortsev S. V. 3,4, Azarov I. A. 1,5, Volodin V.A. 1,5
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Siberian State University of Science and Technology, Krasnoyarsk, Russia
4Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
5Novosibirsk State University, Novosibirsk, Russia
Email: astankova-kn@isp.nsc.ru, nikitkis2002@gmail.com, samus2004@list.ru, matsyninaa@gmail.com, komogor@iph.krasn.ru, azarov_ivan@mail.ru, volodin@isp.nsc.ru
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This paper presents the results on the modification of the optical properties of GeOx thin films subjected to thermal annealing in the temperature range of 280-400 oC in air. The GeOx films were deposited by thermal evaporation of germanium monoxide granules in vacuum and subsequent vapor condensation onto unheated glass substrates. Raman spectroscopy data reveal that annealing the germanium monoxide films up to 280 oC leads to the formation of amorphous Ge nanoparticles, while heating to 380 oC initiates their crystallization. From the measured transmittance and reflectance spectra of the GeOx thin films before and after annealing, the dispersion curves of the refractive and absorption indices were calculated. Furthermore, analysis of the spectral dependence of the absorption coefficient in Tauc coordinates allowed us to determine the optical band gap of the GeOx films. It was found that by varying the annealing temperature, the fundamental absorption edge of the GeOx thin films can be effectively tuned. Keywords: germanium monoxide, Raman spectroscopy, transmission and reflection spectroscopy, Tauc model, fundamental absorption edge.
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