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Modification of the electronic properties of the B12SiO20 crystal by doping it with Fe and Mo
Russian version
Iliinskiy A. V.1, Castro R. A.2, Kononov A. A.2, Nabiullina L. A.3, Shadrin E. B.1
1Ioffe Institute, St. Petersburg, Russia
2Herzen State Pedagogical University of Russia, St. Petersburg, Russia
3Fire and Rescue College and Rescue Training Center, Saint-Petersburg, Russia
Email: shadr.solid@mail.ioffe.ru
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A comparative analysis of the electronic properties of BSO : Fe and BSO : Mo crystals was performed. It was shown that doping with both impurities is accompanied by two competing processes in these crystals, one of which suppresses dark conductivity, while the other acts in the opposite direction. It was established that the process suppressing dark conductivity is a consequence of the compression of the crystal cells surrounding the cell containing the impurity ion. At the same time, the process that narrows the band gap and, consequently, increases dark conductivity is caused by the effect of the isoelectronic impurity potential on the crystal's energetics, which leads to the lifting of the conduction band degeneracy at the Γ-point of the Brillouin zone. Moreover, the ratio of the contributions of both processes to the modification of the electron-optical properties differs for BSO : Fe and BSO : Mo, determined by the ratio of the ionic radii of the substituting and replaced ions. Keywords: sillenite crystals, doping, dielectric spectra, charge transfer, Maxwell relaxation time.
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