Gajiev G.M.1, Ramazanov Sh. M.1, Zeynalov R.Z.1, Efendieva T.N.1, Abakarova N.S.1
1Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, Makhachkala, Russia
Email: ramazanv@mail.ru
This work the influence of the magnitude and duration of preliminary polarizing voltage on the relaxation currents and current-voltage characteristics of the BiFeO3/TiO2(Nt)Ti structure was studied. A two-stage scheme was used: preliminary polarization Upol=30-55 V (tpol=0.1-4 sec) followed by a measurement voltage Umeas=0.1-2 V, within which the relaxation currents J(t) were recorded. It was shown that the I(t) dynamics and the shape of the J-V characteristics are significantly modified by the parameters Upol and tpol; current maxima, sign inversion at low voltages, and N-shaped I-V characteristics were observed. Analysis of the dependences in Schottky, Poole-Frenkel, and space-charge-limited current coordinates revealed the dominant contribution of Schottky and space-charge-limited current mechanisms. The trap-filling voltage was used to estimate the concentration of oxygen vacancies, which increases with higher Upol, consistent with the drift and accumulation of Vo near the cathode. The results demonstrate that controlled preliminary polarization allows for the targeted modification of the structure's conductivity and the optimization of operating regimes for memristive elements based on BiFeO3. Keywords: BiFeO3, leakage current, nanotubes, thin films, memristor.
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Дата начала обработки статистических данных - 27 января 2016 г.