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Investigation of nanostructured thermoelectric materials on basis of SiGe
Shtern Yu. I.
1, Rogachev M. S.
1, Shtern M. Yu.
1, Sherchenkov A. A.
1, Tabachkova N. Yu.
2, Panchenko V. P.
1, Voronov M. V.
1, Mustafoev B.R.1
1National Research University of Electronic Technology, Zelenograd, Moscow, Russia
2National University of Science and Technology MISiS, Moscow, Russia
2National University of Science and Technology MISiS, Moscow, Russia
Email: hptt@miee.ru, m.s.rogachev88@gmail.com, m.y.shtern@gmail.com, aa_sherchenkov@rambler.ru, ntabachkova@misis.ru, vppanchenko@mail.ru, vormike@gmail.com, mustafoyev1996@bk.ru
Thermoelectric materials on basis of n- and p-type SiGe have been synthesized using mechanochemical synthesis and induction melting. Bulk samples were prepared from the powders of the synthesized materials by hot pressing and nanostructured samples by spark plasma sintering. Mechanical, thermal and electrophysical properties of the materials were studied, and thermoelectric figure of merit was determined. Properties of materials obtained by hot pressing and spark plasma sintering were compared. It has been established that the thermal conductivity of nanostructured materials decreases by up to 25 % due to phonon heat transport. This allowed increasing the maximum value of the thermoelectric figure of merit in the temperature range of 1070-1170 K for nanostructured materials based on SiGe of both types of conductivity - for n-type up to 1.24±0.13 and p-type up to 1.22±0.12. Keywords: thermoelectricity, SiGe, nanostructuring, physical parameters, thermoelectric figure of merit.
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