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Admittance characteristics of sensors based on chromium-compensated gallium arsenide
Russian version
Trofimov M. S. 1, Yakovlev N. N. 1
1Tomsk State University, Tomsk, Russia
Email: mikhail.trofimov@mail.tsu.ru
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An experimental study of the admittance characteristics of sensors based on chromium-compensated gallium arsenide (HR-GaAs:Cr) with Ni and Cr barrier contacts in the temperature range of 30-280 oC has been performed. The capacitance-voltage and voltage-siemens dependencies at a frequency of 1 MHz are analysed. It is found that, within the temperature range of 30-150 oC, the HR-GaAs:Cr sensors operate in flat capacitor mode, where capacitance is independent of voltage. Within the temperature range of 150-280 oC, the sensors transition to operating in Schottky barrier mode. It is demonstrated that, within the 230-280 oC range, the appearance of kinks in the capacitance-voltage dependencies is linked to the occurrence of tunnel electrical breakdown in the sensors. It is found that, with increasing voltage, the conductivity of the sensors decreases and reaches the saturation site as a result of depletion of their active region by electrons. The chromium activation energy in GaAs was calculated from the temperature dependence of the sensors conductivity, yielding Ea=0.81 eV, which is in good agreement with the literature data. Keywords: semiconductor sensors, HR-GaAs:Cr, capacitance-voltage dependence, voltage-siemens dependence.
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