Effect of substrate temperature on the morphology and photoelectric properties of thin films of the molecular semiconductor subphthalocyanine boron chloride
Gordeev K. M.
1, Koptyaev A. I.
1, Pakhomov G. L.
11Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: kgor@ipmras.ru, kopt@ipmras.ru, pakhomov@ipmras.ru
The microscopic morphology of thin layers of a low-molecular semiconductor, subphthalocyanine boron chloride (SubPC) is known to undergo substantial changes with increasing substrate temperature during vacuum deposition. In this work, the deposition temperature range was extended toward lower temperatures, from 70 oC to -35 oC. Optical and X-ray studies, along with morphological data of the films, revealed indications of an anomalous growth mechanism transition. Presumably, this is due to thermally activated migration of the molecular aggregates composed of two SubPc molecules (dimers), which have a higher affinity for the substrate surface than single molecule (monomers). Multilayer photodiodes with a molecular heterojunction p-SubPc/n-C60 were fabricated, where SubPc layer was deposited at different temperatures. The best sample with rectification of ~ 9· 103 and photo-to-dark current ratio of ~ 3· 104 was obtained with the SubPc layer deposited at a substrate temperature of 0 oC, thus having rather crystalline structure. Keywords: molecular semiconductors, thin films, growth mechanism, thermodynamic control, photodiode performance.
- G. Lavarda, J. Labella, M.V. Marti nez-Di az, M.S. Rodri guez-Morgade, A. Osuka, T. Torres. Chem. Soc. Rev., 51 (23), 9482 (2022). DOI: 10.1039/D2CS00280A
- G. Akhtanova, H.P. Parkhomenko, N. Asanov, A.I. Mostovyi, N. Schopp, M. Kaikanov, V.V. Brus. Adv. Opt. Mater., 13 (24), 2501396 (2025). DOI: 10.1002/adom.202501396
- E. Feltri, P. Mondelli, B. Petrovic, F.M. Ferrarese, A. Sharova, G. Stojanovic, A. Luzio, M. Caironi. Adv. Sci., 11 (41), (2024). DOI: 10.1002/advs.202404658
- G.L. Pakhomov, V.V. Travkin, P.A. Stuzhin. In Recent Advances in Boron-Containing Materials (IntechOpen, 2020), DOI: 10.5772/intechopen.90292
- G.A. Nowsherwan, Q. Ali, U.F. Ali, M. Ahmad, M. Khan, S.S. Hussain. Organics, 5 (4), 520 (2024). DOI: 10.3390/org5040028
- J. Bisquert. J. Phys. Chem. Lett., 3 (11), 1515 (2012). DOI: 10.1021/jz300600j
- A.I. Koptyaev, V.V. Travkin, P.A. Yunin, K.M. Gordeev, G.L. Pakhomov. J. Mater. Sci.: Mater. Electron., 36 (17), 1053 (2025). DOI: 10.1007/s10854-025-15073-7
- C.-F. Lin, S.-W. Liu, C.-C. Lee, J.-C. Hunag, W.-C. Su, T.-L. Chiu, C.-T. Chen, J.-H. Lee. Sol. Energy Mater. Sol. Cells, 103, 69 (2012). DOI: 10.1016/j.solmat.2012.04.005
- R.R. Cranston, B.H. Lessard. RSC Adv., 11 (35), 21716 (2021). DOI: 10.1039/D1RA03853B
- O. Koifman, A. Koptyaev, V. Travkin, P. Yunin, N. Somov, D. Masterov, G. Pakhomov. Colloids Interfaces, 6 (4), 77 (2022). DOI: 10.3390/colloids6040077
- Z.J. Comeau, R.R. Cranston, H.R. Lamontagne, C.S. Harris, A.J. Shuhendler, B.H. Lessard. Commun. Chem., 5 (1), 178 (2022). DOI: 10.1038/s42004-022-00797-y
- C.-T. Chou, W.-L. Tang, Y. Tai, C.-H. Lin, C.-H.J. Liu, L.-C. Chen, K.-H. Chen. Thin Solid Films, 520 (6), 2289 (2012). DOI: 10.1016/j.tsf.2011.09.062
- M. Li, W.-H. Li, Y.-J. Hu, J. Leng, W.-M. Tian, C.-Y. Zhao, J.-X. Liu, R.-R. Cui, S.-Y. Jin, C.-H. Cheng, S.-L. Cong. Chin. J. Chem. Phys., 35 (6), 900 (2022). DOI: 10.1063/1674-0068/cjcp2103052
- S.S. Harivyasi, O.T. Hofmann, N. Ilyas, O.L.A. Monti, E. Zojer. J. Phys. Chem. C, 122 (26), 14621 (2018). DOI: 10.1021/acs.jpcc.8b03675
- J. Wang, P. Yang, X. Zhao, L. Yang. Thin Solid Films, 636, 527 (2017). DOI: 10.1016/j.tsf.2017.07.001
- S. Kalia, A. Mahajan, C.G. Ghansyam, A.K. Debnath, V. Saxsena, D.K. Aswal, R.K. Bedi. J. Appl. Phys., 121 (9), 095501 (2017). DOI: 10.1063/1.4977695
- Y.H. Son, G.W. Kim, W.S. Jeon, R. Pode, J.H. Kwon. Mol. Cryst. Liq. Cryst., 565 (1), 8 (2012). DOI: 10.1080/15421406.2012.690976
- R. Zigelstein, A.J. Lough, T.P. Bender. Acta Crystallogr. C Struct. Chem., 80 (10), 658 (2024). DOI: 10.1107/S2053229624006934
- G.L. Pakhomov, V.V. Travkin, A.N. Tropanova, A.I. Mashin, A.A. Logunov. Nanotechnol. Russ., 9 (1-2), 77 (2014). DOI: 10.1134/S199507801401011X
- P.A. Yunin, V.V. Travkin, Y.I. Sachkov, A.I. Koptyaev, P.A. Stuzhin, G.L. Pakhomov. Appl. Surf. Sci., 512, 145645 (2020). DOI: 10.1016/j.apsusc.2020.145645
- C.C. Mattheus, W. Michaelis, C. Kelting, W.S. Durfee, D. Wohrle, D. Schlettwein. Synth. Met., 146 (3), 335 (2004). DOI: 10.1016/j.synthmet.2004.08.019
- N.R. Gall', E.V. Rut'kov, A.Ya. Tontegode. Semiconductors, 39 (11), 1280 (2005). DOI: 10.1134/1.2128450
- K. Reichelt. Vacuum, 38 (12), 1083 (1988). DOI: 10.1016/0042-207X(88)90004-8
- J. Kim, S. Yim. Appl. Phys. Lett., 99 (19), (2011). DOI: 10.1063/1.3660710
- T. Mirabito, B. Huet, J.M. Redwing, D.W. Snyder. ACS Omega, 6 (31), 20598 (2021). DOI: 10.1021/acsomega.1c02758
- S. Tabuchi, Y. Otsuka, M. Kanai, H. Tabata, T. Matsumoto, T. Kawai. Org. Electron., 11 (5), 916 (2010). DOI: 10.1016/j.orgel.2010.02.011
- G.L. Pakhomov, A.I. Koptyaev, P.A. Yunin, N.V. Somov, A.S. Semeikin, E.D. Rychikhina, P.A. Stuzhin. Chem. Select, 8 (45), e202303271 (2023). DOI: 10.1002/slct.202303271
- M. Trelka, A. Medina, D. Ecija, C. Urban, O. Groning, R. Fasel, J.M. Gallego, C.G. Claessens, R. Otero, T. Torres, R. Mirandaae. Chem. Commun., 47 (36), 9986 (2011). DOI: 10.1039/c1cc11658d
- K.L. Sampson, X. Jiang, E. Bukuroshi, A. Dovijarski, H. Raboui, T.P. Bender, K.M. Kadish. J. Phys. Chem. A, 122 (18), 4414 (2018). DOI: 10.1021/acs.jpca.8b02023
- X. Chen, S Zheng. Org. Electron., 62, 667 (2018). DOI: 10.1016/j.orgel.2018.07.005
- J. Zhang, Y. Li, X. Jiang, Z. Wang, C. Yang. Dyes Pigm., 170, 107584 (2019). DOI: 10.1016/j.dyepig.2019.107584
- V. Rani, A. Sharma, P. Kumar, B. Singh, S. Ghosh. RSC Adv., 7 (86), 54911 (2017). DOI: 10.1039/C7RA08316E
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.