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Influence of ammoniou iodide precursor on the structures and lifetime of charge carriers in the lead sulfide photosensitive elements
Russian version
Makaruk K.S. 1,2, Miroshnikov B. N. 1, Barinov A.D. 1, Popov A. I. 1, Miroshnikova I.N. 1, Patsaev T.D. 3, Vasiliev A.L. 3, Goryachev A.V 2, Maskaeva L. N. 4,5
1National Research University «Moscow Power Engineering Institute», Moscow, Russia
2 Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, Russia
3National Research Center “Kurchatov Institute”, Moscow, Russia
4Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
5Ural Institute of State Fire Service of EMERCOM of Russia, Yekaterinburg, Russia
Email: krismkrk@yandex.ru, MiroshnikovBN@mpei.ru, BarinovAD@mpei.ru, popovai2009@gmail.com, MiroshnikovaIN@mpei.ru, timpatsaev@mail.ru, a.vasiliev56@gmail.com, andrei.goryachev@mail.ru, larisamaskaeva@yandex.ru
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The structure and characteristics of photosensitive elements based on thin films of lead sulfide (PbS) were studied. The films were prepared by chemical precipitation in the presence of a precursor (ammonium iodide (NH4I)) in different molar concentrations. It has been established that iodine and its compounds (formed at an early stage of thin film deposition) lead to a change in the formation mechanism of the material structure. In turn, this leads to a decrease in the thickness of the oxygen-containing layers between the crystallites and has a decisive influence on the increase in the mobility of charge carriers. It is shown that the increase in photosensitivity at low frequencies (up to 800 Hz) is associated with the formation of oxygen-containing compositions and the appearance of a second group of charge carriers with lifetimes of 860-930 μs. Keywords: thin films, structure, lead sulfide, chemical deposition method, photosensitive elements, photoelectric parameters, relaxation time.
  1. Yu.I. Ravich, B.A. Efimova, I.A. Smirnov. Metody issledovaniya poluprovodnikov v primenenii k khal'kogenidam svintsa PbTe, PbSe, PbS (Nauka, M., 1968) (in Russian)
  2. S.I. Sadovnikov, A.I. Gusev. J. Alloys Compounds, 573, 65 (2013). DOI: 10.1016/j.jallcom.2013.03.290
  3. E. Pentia, V. Draghici, G. Sarau. J. Electrochem. Soc., 151 (11), G729 (2004). DOI: 10.1149/1.1800673
  4. A. Ounissi, N. Ouddai, S. Achour. Eur. Phys. J. Appl. Phys., 37 (3), 241 (2007). DOI: 10.1051/epjap:2007034
  5. T.S. Moss. Proc. Phys. Soc., B66 (12), 993 (1953). DOI: 10.1088/0370-1301/66/12/301
  6. P.M. Khanzode, D.I. Halge, V.N. Narwade, J.W. Dadge, K.A. Bogle. Optik, 226, 165933 (2021). DOI: 10.1016/j.ijleo.2020.165933
  7. P.L. Nichols, Z. Liu, L. Yin, S. Turkdogan, F. Fan, C.Z. Ning. Nano Lett., 15 (2), 909 (2015). DOI: 10.1021/nl503640x
  8. J. Hernadez-Borja, Y.V. Vorobiev, R. Ramirez-Bon. Solar Energy Mater. Solar Cells, 95, 1882 (2011). DOI: 10.1016/j.solmat.2011.02.012
  9. F. Jahnig, D. Bozyigit, O. Yarema, V. Wood. APL Mater., 3, 020701 (2015). DOI: 10.1063/1.4907158
  10. D.G. Moon, S. Rehan, D.H. Yeon, S.M. Lee, S.J. Park, S. Ahn, Y.S. Cho. Solar Energy Mater. Solar Cells, 200, 109963 (2019). DOI: 10.1016/j.solmat.2019.109963
  11. X. Chen, J. Hu, P. Chen, M. Yin, F. Meng, Y. Zhang. Sensors and Actuators B: Chemical, 339, 129902 (2021). DOI: 10.1016/j.snb.2021.129902
  12. V.V. Burungale, R.S. Devan, S.A. Pawar, N.S. Harale, V.L. Patil, V.K. Rao, Yuan-Ron Ma, J.E. Ae, J.H. Kim, P.S. Patil. Mater. Science-Poland, 34 (1), 204 (2016). DOI: 10.1515/msp-2016-0001
  13. T.V. Beatriceveena, E. Prabhu, A. Sree Rama Murthy, V. Jayaraman, K.I. Gnanasekar. Appl. Surface Sci., 456, 430 (2018). DOI: 10.1016/j.apsusc.2018.06.145
  14. I.V. Zarubin, V.F. Markov, L.N. Maskaeva, N.V. Zarubina, M.V. Kuznetsov. J. Analytical Chem., 72 (3), 327 (2017). DOI: 10.1134/s1061934817030145
  15. T.A. Fatkhetdinova, V.F. Markov, E.A. Zorina, L.N. Maskaeva, I.D. Basalaev. Butlerovskie soobshcheniya, 82 (2), 84 (2025) (in Russian)
  16. T. Blachowicz, A. Ehrmann. Appl. Sci., 10 (5), 1743 (2020). DOI: 10.3390/app10051743
  17. Z. Ren, J. Sun, H. Li, P. Mao, Y. Wei, X. Zhong, J. Hu, S. Yang, J. Wang. Advanced Mater., 29, (33) 1702055 (2017). DOI: 10.1002/adma.201702055
  18. C. Nascu, V. Vomir, I. Pop, V. Ionescu, R. Grecu. J. Mater. Sci. Engineering: B, 41 (2), 235 (1996). DOI: 10.1016/S0921-5107(96)01611-X
  19. B.N. Miroshnikov, I.N. Miroshnikova, H.S.H. Mohamed, A.I. Popov. Measurement Techniques, 58 (2), 167 (2015). DOI: 10.1007/s11018-015-0680-8
  20. L. Fan, Z. Huang, Q. Lu, G. Liu, J. Liu. Acta Optica Sinica, 43 (10), 1031001 (2023). DOI: 10.3788/AOS222038
  21. G.H. Blount, P.J. Schreiber, D.K. Smith, R.T. Yamada. J. Appl. Phys., 44 (3), 978 (1973). DOI: 10.1063/1.1662381
  22. G.M. Wolten. J. Electrochem. Society, 122 (8), 1149 (1975). DOI: 10.1149/1.2134413
  23. Metin Kul. J. Sci. Technology B-Theoretical Sci., 7 (1), 46 (2019). DOI: 10.20290/aubtdb.465445
  24. M. Sasani Ghamsari, M.K. Araghi, S.J. Farahani. Mater. Sci. Engineering: B, 133, 113 (2006). DOI: 10.1016/j.mseb.2006.06.021
  25. I. Pop, V. Ionescu, C. Nascu, V. Vomir, R. Grecu, E. Indrea. Thin Solid Films, 283, 119 (1996)
  26. B. Alti okka. Arabian J. Sci. Engineering, 40 (7), 2085 (2015). DOI: 10.1007/s13369-015-1680-3
  27. H.N. Venkoba Rao, J. Kuppuswamy, R. Lakshmi Naraynan. Indian J. Pure Appl. Phys., 1 (9), 335 (1963)
  28. S.M. Simic, Z.B. Marinkovic. Infrared Phys., 8, 189 (1968). DOI: 10.1016/0020-0891(68)90008-0
  29. Z.B. Marinkovic, V.M. Simic. J. Infrared Phys., 10, 187 (1970). DOI: 10.1016/0020-0891(70)90010-2
  30. L.N. Maskaeva, N.A. Forostyanaya, V.F. Markov, A.S. Eremina, K.A. Karpov. Butlerovskie soobshcheniya, 51 (7), 115 (2017) (in Russian)
  31. H.S.H. Mohamed, M. Abdel-Hafiez, B.N. Miroshnikov, A.D. Barinov, I.N. Miroshnikova. J. Mater. Sci. Semiconductor Processing, 27, 725 (2014). DOI: 10.1016/J.MSSP.2014.08.010
  32. B.N. Miroshnikov, I.N. Miroshnikova, A.I. Popov, M.Y. Zinchenko. J. Nanoelectron. Optoelectron, 9, 783 (2014). DOI: 10.1166/jno.2014.1677
  33. B.N. Miroshnikov, I.N. Miroshnikova, A.I. Popov. FTP, 52 (2), 243 (2018) (in Russian). DOI: 10.21883/FTP.2018.02.45450.8639 [B.N. Miroshnikov, I.N. Miroshnikova, A.I. Popov. Semiconductors, 52 (2), 231 (2018). DOI: 10.1134/S1063782618020082]
  34. Y.H. Mohammed Thabit, N.M. Kaawash, Ir.H. Devidas, M.S.K. Nabeel. J. Phys.: Conf. Ser., 2426 (1), 012004 (2023). DOI: 10.1088/1742-6596/2426/1/012004
  35. M.D. Aksenenko, E.A. Krasovsky. Fotorezistory (Sovetskoe radio, M., 1973) (in Russian)
  36. V.G. Butkevich, E.R. Globus, L.N. Zalevskaya. (in Russian) Prikladnaya fizika, 2, 52 (1999) (in Russian)
  37. B. Alti okka, M. Onal. J. Optoelectronics and Advanced Mater., 25, 42 (2023)
  38. Ali M. Mousa, Sima M. Hassen, S. Mohmoed. International Lett. Chem., Phys. Astronomy, 34, 1 (2014). DOI: 10.56431/p-x3182s
  39. A.N. Chattarki, S.S. Kamble, L.P. Deshmukh. Mater. Lett., 67 (1), 39 (2012). DOI: 10.1016/j.matlet.2011.08.10
  40. B. Abdallah, R. Hussein, N. Al-Kafri, W. Zetoun. Iranian J. Sci. Technol., Transactions A: Sci., 43, 1371 (2019). DOI: 10.1007/s40995-019-00698-1
  41. E.M. Larramendi, O. Calzadilla, A. Gonzalez-Arias, E. Hernandez, J. Ruiz-Garcia. Thin Solid Films, 389, 301 (2001). DOI: 10.1016/S0040-6090(01)00815-X
  42. J.N. Humphrey, W.W. Scanlon. Phys. Rev., 105 (2), 469 (1957). DOI: 10.1103/physrev.105.469
  43. V.F. Markov, L.N. Maskaeva, G.A. Kitaev. Inorganic Mater., 36 (7), 657 (2000)
  44. Y. Suh, S.-H. Suh. J. Infrared Sensors, Devices, Applications, 9974, 997405 (2016). DOI: 10.1117/12.2237284
  45. V.I. Kaidanov, Yu.I. Ravich. UFN, 145 (1), 51 (1985) (in Russian). DOI: 10.3367/UFNr.0145.198501b.0051
  46. S.P. Zimin, R.F. Zaikina. FTP, 29 (4), 729 (1995) (in Russian)
  47. V.F. Markov, A.V. Shnaider, M.P. Mironov, V.F. Diakov, L.N. Maskaeva. Perspektivnye materialy, 3, 28 (2008) (in Russian)
  48. L.N. Maskaeva, A.V. Beltseva, E.V. Mostovshchikova,V.I. Voronin, O.S. Eltsov, I.V. Baklanova, P.N. Mushnikov, K.S. Makaruk, V.F. Markov. Thin Solid Films, 817, 140654 (2025). DOI: 10.1016/j.tsf.2025.140654
  49. V.F. Markov, L.N. Maskaeva, E.V. Mostovshchikova, V.I. Voronin, A.V. Pozdin, A.V. Beltseva, I.O. Selyanin, I.V. Baklanova. J. Phys. Chem., 24 (26), 16085 (2022). DOI: 10.1039/d2cp01815b
  50. A.V. Pozdin. Avtoreferat kand.diss. (YrFU, Ekaterinburg, 2024) (in Russian)
  51. L.N. Maskaeva, A.V. Beltseva, O.S. Eltsov, I.V. Baklanova, I.A. Mikhailov, V.F. Markov. Opt. i spektr., 131 (10), 1380 (2023) (in Russian). DOI: 10.61011/OS.2023.10.56890.4557-23
  52. V.S. Vavilov. Deistvie izluchenij na poluprovodniki (GIFML, M., 1963)
  53. V.S. Popov, V.P. Ponomarenko, D.V. Demkin, I.A. Shuklov, A.V. Gadomskaya, S.B. Brichkin, N.A. Lavrentiev, V.Yu. Gak, A.E. Mirofyanchenko, E.V. Mirofyanchenko. Doklady Rossiiskoi akademii nauk. Fizika, tekhnicheskie nauki, 511 (1), 78 (2023). DOI: 10.31857/S2686740023040120
  54. S. Espevik, W. Chen-ho, R.H. Bube. J. Appl. Phys., 42 (9), 3513 (1971). DOI: 10.1063/1.1660763
  55. N.K. Morozova, B.N. Miroshnikov. Semiconductors, 52 (3), 278 (2018). DOI: 10.1134/S106378261803017X
  56. I.B. Varlashov, P.V. Mitasov, I.N. Miroshnikova, B.N. Miroshnikov, H.S.H. Mokhamed. Vestnik MEI, 2, 103 (2015) (in Russian)
  57. L.E. Davis, N.C. MacDonald, P.W. Palmberg, G.E. Riach, R.E. Weber. Handbook of Auger electron spectroscopy. Second ed. (Physical Electronics Division PerkinElmer Corporation, Eden Prairie, Minn 1976)

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