Broadband infrared radiation detector based on laser-induced graphene
Sukhorukov Yu. P. 1, Telegin A. V. 1, Zonov R.G. 2, Mikheev G.M. 2
1M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
2Udmurt Federal Research Center, Ural Branch Russian Academy of Sciences, Izhevsk, Russia
Email: suhorukov@imp.uran.ru, telegin@imp.uran.ru, znv@udman.ru, mikheev@udman.ru

PDF
A broadband high-frequency infrared radiation detector based on laser-induced graphene (LIG) obtained by pyrolysis of a polyimide film has been developed. The spectral characteristic of the detector's photoresponse corresponds to the spectrum of an absolute blackbody, except for features inherent to the setup. Unlike standard bolometers, the frequency dependence of the laser-induced graphene-based detector is determined by two different mechanisms. This results in a weak loss of the detector's sensitivity at frequencies up to and higher 1-10 kHz. The detector's efficient light absorption across a broad spectral range (from 1 <λ <21 μm) under various conditions and its relatively high sensitivity (~ 0.16 %/W) make it a promising candidate for the development of technologically simple and cost-effective infrared receivers. Keywords: laser-induced graphene, infrared range, bolometric receiver, polyimide film, high-frequency modulation.
  1. K.S. Novoselov, A.K. Geim, S.V. Morozov, Da Jiang, Ya. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Fetisov. Science, 306, 666 (2004). DOI: 10.1126/science.1102896
  2. D.R. Cooper, B. D'Anjou, N. Ghattamaneni, B. Harack, M. Hilke, A. Horth, N. Majlis, M. Massicotte, L. Vandsburger, E. Whiteway. Intern. Schol. Research Notic., 2012 (1), 501686 (2012). DOI: 10.5402/2012/501686
  3. V. Singh, D. Joung, L. Zhai, S. Das, S.I. Khondaker, S. Seal. Prog. Mater. Sci., 56, 1178 (2011). DOI: 10.1016/J.PMATSCI.2011.03.003
  4. P.B. Sorokin, L.A. Chernozatonskii. Phys. Usp., 56, 105 (2013). DOI: 10.3367/UFNe.0183.201302a.0113
  5. A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, A.K. Geim. Phys. Rev. Lett., 97, 187401 (2006). DOI: 10.1103/PhysRevLett.97.187401
  6. A.V. Klekachev, A. Nourbakhsh, I. Asselberghs, A.L. Stesmans, M.M. Heyns, S. De Gendt. Electrochem. Soc. Inter., 22 (1), 63 (2013). DOI: 10.1149/2.F07131if
  7. F.H.L. Koppens, T. Mueller, Ph. Avouris, A.C. Ferrari, M.S. Vitiello, M. Polini. Nat. Nanotechnol., 9 (10), 780 (2014). DOI: 10.1038/nnano.2014.215
  8. C.W.J. Beenakker. Rev. Mod. Phys., 80, 1337 (2008). DOI: 10.1103/RevModPhys.80.1337
  9. Xu Du, D.E. Prober, H. Vora, C. Mckitterick. Graphene 2D Mater., 1, 1 (2014). DOI: 10.2478/gpe-2014-0001
  10. Y. Xie, M. Han, R. Wang, H. Zobeiri, X. Deng, P. Zhang, X. Wang. ACS Nano, 13, 5385 (2019). DOI: 10.1021/acsnano.9b00031
  11. A.L. Gorkina, E.P. Gilstein, A.G. Nasibulin, A.P. Tsapenko, Y.G. Gladush. Infrared radiation detector based on single-layered carbon nanotubes and graphene (Patent RU162342U1, 2016)
  12. J.E. Elwood, K.S. Ashok. Thermal detectors using graphene and oxides of graphene and methods of making the same (Patent US 10937914 (B1), 2021)
  13. R.G. Zonov, K.G. Mikheev, A.A. Chulkina, I.A. Zlobin, G.M. Mikheev. Diamond Related Mater., 148, 111409 (2024). DOI: 10.1016/j.diamond.2024.111409
  14. S. Evlashin, P. Dyakonov, R. Khmelnitsky, S. Dagesyan, A. Klokov, A. Sharkov, P. Timashev, S. Minaeva, K. Maslakov, S. Svyakhovskiy, N. Suetin. ACS Appl. Mater. Interf., 8, 28880 (2016). DOI: 10.1021/acsami.6b10145
  15. J. Lin, Z. Peng, Y. Liu, F. Ruiz-Zepeda, R. Ye, E.L.G. Samuel, M.J. Yacaman, B.I. Yakobson, J.M. Tour. Nat. Commun., 5, 5714 (2014). DOI: 10.1038/ncomms6714
  16. A. Bianco, H.M. Cheng, T. Enoki, Y. Gogotsi, R.H. Hurt, N. Koratkar, T. Kyotani, M. Monthioux, C.R. Park, J.M.D. Tascon, J. Zhang. Carbon, 65, 1 (2013). DOI: 10.1016/j.carbon.2013.08.038
  17. Y. Guo, C. Zhang, Y. Chen, Z. Nie. Nanomaterials, 12, 2336 (2022). DOI: 10.3390/nano12142336
  18. L. Lan, X. Le, H. Dong, J. Xie, Y. Ying, J. Ping. Biosens. Bioelectron., 165, 112360 (2020). DOI: 10.1016/j.bios.2020.112360
  19. M.G. Stanford, C. Zhang, J.D. Fowlkes, A. Hoffman, I.N. Ivanov, P.D. Rack, J.M. Tour, A. Ho, I.N. Ivanov, P.D. Rack, J.M. Tour. ACS Appl. Mater. Interfaces., 12, 10902 (2020). DOI: 10.1021/acsami.0c01377
  20. H. Wang, H. Wang, Y. Wang, X. Su, C. Wang, M. Zhang, M. Jian, K. Xia, X. Liang, H. Lu, S. Li, Y. Zhang, Laser. ACS Nano, 14, 3219 (2020). DOI: 10.1021/acsnano.9b08638
  21. M. Dosi, I. Lau, Y. Zhuang, D.S.A. Simakov, M.W. Fowler, M.A. Pope. ACS Appl. Mater. Interfaces, 11, 6166 (2019). DOI: 10.1021/acsami.8b22310
  22. M.G. Stanford, K. Yang, Y. Chyan, C. Kittrell, J.M. Tour. ACS Nano., 13, 3474 (2019). DOI: 10.1021/acsnano.8b09622
  23. N.T. Garland, E.S. McLamore, N.D. Cavallaro, D. Mendivelso-Perez, E.A. Smith, D. Jing, J.C. Claussen. ACS Appl. Mater. Interfaces, 10, 39124 (2018). DOI: 10.1021/acsami.8b10991
  24. W. Yan, W. Yan, T. Chen, J. Xu, Q. Tian, D. Ho. ACS Appl. Nano Mater., 3, 2545 (2020). DOI: 10.1021/acsanm.9b02614
  25. C. Yi, Y. Hou, K. He, W. Li, N. Li, Z. Wang, B. Yang, S. Xu, H. Wang, C. Gao, Z. Wang, G. Gu, Z. Wang, L. Wei, C. Yang, M. Chen. ACS Appl. Mater. Interfaces, 12, 19563 (2020). DOI: 10.1021/acsami.0c02774
  26. G. Li, W.-C. Law, K.C. Chan. Green Chem., 20, 3689 (2018). DOI: 10.1039/C8GC01347K
  27. L. Huang, L. Ling, J. Su, Y. Song, Z. Wang, B.Z. Tang, P. Westerhoff, R. Ye. ACS Appl. Mater. Interfaces, 12, 51864 (2020). DOI: 10.1021/acsami.0c16596
  28. C.M. Tittle, D. Yilman, M.A. Pope, C.J. Backhouse. Adv. Mater. Technol., 3, 1700207 (2018). DOI: 10.1002/admt.201700207
  29. L. Cheng, W. Guo, X. Cao, Y. Dou, L. Huang, Y. Song, J. Su, Z. Zeng, R. Ye. Mater. Chem. Front., 5, 4874 (2021). DOI: 10.1039/d1qm00437a
  30. J. Li, Z. Jing, F. Zha, Y. Yang, Q. Wang, Z. Lei. ACS Appl. Mater. Interfaces, 6, 8868 (2014). DOI: 10.1021/am5015937
  31. T. Darmanin, F. Guittard. J. Mater. Chem. A, 4, 3197 (2016). DOI: 10.1039/C5TA09253A
  32. C.R. Szczepanski, F. Guittard, T. Darmanin. Adv. Colloid Interface Sci., 241, 37 (2017). DOI: 10.1016/j.cis.2017.01.002
  33. R. Ye, D.K. James, J.M. Tour. Adv. Mater., 31, 1803621 (2019). DOI: 10.1002/adma.201803621
  34. W. Song, J. Zhu, B. Gan, S. Zhao, H. Wang, C. Li, J. Wang. Small, 14, 1702249 (2018). DOI: 10.1002/smll.201702249
  35. W. Ma, J. Zhu, Z. Wang, W. Song, G. Cao. Mater. Today Energy, 18, 100569 (2020). DOI: 10.1016/j.mtener.2020.100569
  36. J. Cai, C. Lv, A. Watanabe. J. Mater. Chem. A, 4, 1671 (2016). DOI: 10.1039/C5TA09450J
  37. P. Zaccagnini, D. di Giovanni, M.G. Gomez, S. Passerini, A. Varzi, A. Lamberti. Electrochim. Acta, 357, 136838 (2020). DOI: 10.1016/j.electacta.2020.136838
  38. D. Yang, C. Bock. J. Power Sources, 337, 73 (2017). DOI: 10.1016/j.jpowsour.2016.10.108
  39. Y. Wang, Y. Zhao, L. Qu. J. Energy Chem., 59, 642 (2021). DOI: 10.1016/j.jechem.2020.12.002
  40. J. Yi, J. Chen, Z. Yang, Y. Dai, W. Li, J. Cui, F. Ciucci, Z. Lu, C. Yang, Adv. Energy Mater., 9, 1901796 (2019). DOI: 10.1002/aenm.201901796
  41. R. Ye, Z. Peng, T. Wang, Y. Xu, J. Zhang, Y. Li, L.G. Nilewski, J. Lin, J.M. Tour. ACS Nano, 9, 9244 (2015). DOI: 10.1021/acsnano.5b04138
  42. D.X. Luong, K. Yang, J. Yoon, S.P. Singh, T. Wang, C.J. Arnusch, J.M. Tour. ACS Nano, 13, 2579 (2019). DOI: 10.1021/acsnano.8b09626
  43. Y. Chyan, R. Ye, Y. Li, S.P. Singh, C.J. Arnusch, J.M. Tour, ACS Nano, 12, 2176 (2018). DOI: 10.1021/acsnano.7b08539
  44. L. Huang, S. Xu, Z. Wang, K. Xue, J. Su, Y. Song, S. Chen, C. Zhu, B.Z. Tang, R. Ye. ACS Nano, 14, 12045 (2020). DOI: 10.1021/acsnano.0c05330
  45. R.M. Torrente-Rodri guez, H. Lukas, J. Tu, J. Min, Y. Yang, C. Xu, H.B. Rossiter, W. Gao. Matter, 3, 1981 (2020). DOI: 10.1016/j.matt.2020.09.027
  46. K.G. Mikheev, R.G. Zonov, T.N. Mogileva, A.E. Fateev, G.M. Mikheev. Opt. Laser Technol., 141, 107143 (2021). DOI: 10.1016/j.optlastec.2021.107143
  47. X. Yu, N. Li, S. Zhang, C. Liu, L. Chen, S. Han, Y. Song, M. Han, Z. Wang. J. Power Sources, 478, 229075 (2020). DOI: 10.1016/j.jpowsour.2020.229075
  48. K.G. Mikheev, R.G. Zonov, D.L. Bulatov, A.V. Syugaev, G.M. Mikheev. Technical Physics Letters, 50 (10), 51 (2024). DOI: 10.61011/TPL.2024.10.60118.19976
  49. K.G. Mikheev, A.V. Syugaev, R.G. Zonov, D.L. Bulatov, G.M. Mikheev. Phys. Solid State, 65 (2), 347 (2023). DOI: 10.21883/PSS.2023.02.55422.529
  50. K.G. Mikheev, R.G. Zonov, D.L. Bulatov, A.E. Fateev, G.M. Mikheev. Tech. Phys. Lett., 46, 458 (2020). DOI: 10.1134/S1063785020050119
  51. C. Zhang, Y. Xie, H. Deng, T. Tumlin, C. Zhang, J.W. Su, P. Yu, J. Lin. Small, 13, 1604197 (2017). DOI: 10.1002/smll.201604197
  52. Yu.P. Sukhorukov, A.V. Telegin, K.G. Mikheev, R.G. Zonov, L.I. Naumova, G.M. Mikheev. Opt. Mater., 133, 112957 (2022). DOI: 10.1016/j.optmat.2022.112957
  53. R.G. Zonov, K.G. Mikheev, D.L. Bulatov, T.N. Mogileva, A.V. Syugaev, G.M. Mikheev. Diam. Relat. Mater., 157, 112529 (2025). DOI: 10.1016/j.diamond.2025.112529
  54. K.G. Mikheev, A.E. Fateev, R.G. Zonov, D.L. Bulatov, G.M. Mikheev. Journal of Physics: Conference Series. IOP Publishing. 1695 (1), 012113 (2020). DOI: 10.1088/1742-6596/1695/1/012113
  55. A.V. Kuksin, A.Y. Gerasimenko, Y.P. Shaman, E.P. Kitsyuk, A.A. Shamanaev, A.V. Sysa, E.M. Eganova, M.M. Slepchenkov, M.V. Poliakov, A.A. Pavlov, O.E. Glukhova. Appl. Surf. Sci., 664, 160222 (2024). DOI: 10.1016/j.apsusc.2024.160222
  56. N.P. Nekrasov, D.T. Murashko, P.N. Vasilevsky, A.Y. Gerasimenko, V.K. Nevolin, I.I. Bobrinetskiy. Semiconductors, 58, 1109 (2024). DOI: 10.1134/S1063782624700131
  57. J. Zhai, Z. Yu, J. Hu. Manuf. Process, 146, 211 (2025). DOI: 10.1016/j.jmapro.2025.05.001
  58. N.N. Nghia, D.T.C. Minh, N.H. Hieu. Microchem. J., 213, 113713 (2025). DOI: 10.1016/j.microc.2025.113713
  59. K.G. Mikheev, R.G. Zonov, A.V. Syugaev, D.L. Bulatov, G.M. Mikheev. Physics of the Solid State, 64 (5), 579 (2022). DOI: 10.21883/PSS.2022.05.53520.277
  60. Z. Yin, S. Chen, C. Hu, J. Li, X. Yang. Opt. Laser Technol., 176, 110998 (2024). DOI: 10.1016/j.optlastec.2024.110998
  61. X. Li, W. Cai, K.S. Teh, M. Qi, X. Zang, X. Ding, Y. Cui, Y. Xie, Y. Wu, H. Ma, Z. Zhou, Q.A. Huang, J. Ye, L. Lin. ACS Appl. Mater. Interfaces, 10, 26357 (2018). DOI: 10.1021/acsami.8b10301
  62. A. Rabti, S. Baachaoui, M. Zouari, N. Raouafi. J. Pharm. Biomed. Anal. Open, 5, 100069 (2025). DOI: 10.1016/j.jpbao.2025.100069
  63. I.V. Antonets, E.A. Golubev, V.G. Shavrov, V.I. Shcheglov. J. Radio Electron., 3, 1684 (2020). DOI: 10.30898/1684-1719.2020.3.7
  64. P.L. Richards. J. Appl. Phys., 76 (1), 1 (1994). DOI: 10.1063/1.357128
  65. B.N. Formozov. Aerokosmicheskie fotopriemnye ustroistva v vidimom i infrakrasnom diapazonakh (SPbGUAP, SPb, 2002) (in Russian)
  66. A.N.Aleksandrov, V.A.Nikitin. UFN, 56 (5), 3 (1955) (in Russian)
  67. D.S.L. Abergel, V. Apalkov, J. Berashevich, K. Ziegler, T. Chakraborty. Adv. Phys., 59 (4), 261 (2010). DOI: 10.1080/00018732.2010.487978
  68. A.V.Eletsky, I.M. Iskandarova, A.A.Knizhnik, D.N.Krasikov. UFN, 181 (3), 233 (2011) (in Russian). DOI: 10.3367/UFNe.0181.201103a.0233
  69. R.A.Brazhe, A.I.Kochaev, R.M.Meftakhutdinov. Grafeny i ikh fizicheskie svoistva (UlGTU, Ulyanovsk, 2016) (in Russian)
  70. J.J. Bae, J.H. Yoon, S. Jeong, B.H. Moon, J.T. Han, H.J. Jeong, G.W. Lee, H.R. Hwang, Y.H. Lee, S.Y. Jeong, S.C. Lim. Nanoscale, 7, 15695 (2015). DOI: 10.1039/C5NR04039F
  71. J. Yan, M.H. Kim, J.A. Elle, A.B. Sushkov, G.S. Jenkins, H.W.M. Milchberg, M.S. Fuhrer, H.D. Drew. Nat. Nanotechnol., 7, 472 (2012). DOI: 10.1038/nnano.2012.88
  72. K.G. Mikheev, R.G. Zonov, N.V. Chuchkalov, G.M. Mikheev. Physics of the Solid State, 66 (2), 268 (2024). DOI: 10.61011/PSS.2024.02.57924.5
  73. Q. Wang, Y. Wu, X. Deng, L. Xiang, K. Xu, Y. Li, Y. Xie. Nanomaterials, 12, 495 (2022). DOI: 10.3390/nano12030495

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru