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Magnetoresistive characteristics of the SrIrO3/La2/3Sr1/3MnO3 heterostructure
Russian version
Constantinian K. Y.1, Ulev G.D.1,2, Mashirov A. V. 1, Orlov A. P. 1, Moskal I. E.1, Ovsyannikov G. A.1
1Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
Email: karen@hitech.cplire.ru, gdulev@edu.hse.ru, gena@hitech.cplire.ru
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We report on results of experimental studies of thin-film heterostructure SrIrO3/La2/3Sr1/3MnO3 grown epitaxially on NdGaO3 substrate. A transitional layer is formed at the interface between paramagnetic semimetal SrIrO3, exhibiting strong spin-orbit interaction, and the spin-polarized ferromagnet La2/3Sr1/3MnO3. Single layers of SrIrO3 and La2/3Sr1/3MnO3 were studied as well. The temperature dependences of electronic conductivity, magnetoresistance, and Hall effect responses obtained at magnetic fields H=0-7 T and temperatures T=2-300 K are discussed. Keywords: heterostructure, spin-orbit interaction, strontium iridate, manganite, magnetoresistance, Hall effect.
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