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Growth GaInAsSbBi solid solution on misoriented GaSb(100) 6^o (111)A substrate

Russian version

Pashchenko A.S.

^1,2, Nikulin D.A.

^1,2, Blokhin E.E.

¹Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
²North-Caucasian Federal University, Stavropol, Russia

Email: semicondlab@ssc-ras.ru

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Abstract
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The paper presents the results of growing solid solutions of GaInAsSbBi by pulsed laser deposition on a misoriented GaSb(100) 6^o (111)A substrate. The results of structural analysis using X-ray diffraction, transmission, electron and atomic force microscopy show that the main growth mechanism is the Volmer-Weber. The films have a polycrystalline structure. Stacking faults, twins and dislocations are present in the film volume. The composition of the films is determined by energy-dispersive microanalysis as Ga_0.75In_0.25As_0.87Sb_0.1Bi_0.03. Keywords: III-V compounds, GaSb, gallium antimonide, solid solutions.

A.S. Pashchenko, O.V. Devitsky, L.S. Lunin, I.V. Kasyanov, D.A. Nikulin, O.S. Pashchenko. Thin Solid Films 743, 139064 (2022). DOI: 10.1016/j.tsf.2021.139064
N.A. Shepelin, Z.P. Tehrani, N. Ohannessian, C.W. Schneider, D. Pergolesi, T. Lippert. Chem. Soc. Rev. 52, 2294 (2023). DOI: 10.1039/d2cs00938b
T.K.O. Vu, M.T. Tran, E.K. Kim. J. Alloys Compd. 924, 166531 (2022). DOI: 10.1016/j.jallcom.2022.166531
V.A.S. Kandadai, V. Gadhamshetty, B.K. Jasthi. Surf. Coat. Technol. 447, 128805 (2022). DOI: 10.1016/j.surfcoat.2022.128805
C.K. Jindal, A. Pandey, M. Tomar, P.K. Jha. Appl. Surf. Sci. 595, 153505 (2022). DOI: 10.1016/j.apsusc.2022.153505
A.S. Pashchenko, O.V. Devitsky, M.L. Lunina, E.M. Danilina, O.S. Pashchenko, B. Ber, V.I. Sakharov. Vacuum 227, 113372 (2024). DOI: 10.1016/j.vacuum.2024.113372
W.C. McGinnis, A. Hening. Thin Solid Films 764, 139603 (2023). DOI: 10.1016/j.tsf.2022.139603
D.T. Yimam, H. Zhang, J. Momand, B.J. Kooi. Mater. Sci. Semicond. Process. 133, 105965 (2021). DOI: 10.1016/j.mssp.2021.105965
T.N. Van, E. Laborde, C. Champeaux, F. Dumas-Bouchiat, D.T. Quang, T.N. Vu, C.N. Xuan, D.T.H. Giang, T.P. Van. Appl. Surf. Sci. 619, 156756 (2023). DOI: 10.1016/j.apsusc.2023.156756
R.A. Carrasco, C.P. Morath, J.V. Logan, K.B. Woller, P.C. Grant, H. Orozco, M.S. Milosavljevic, S.R. Johnson, G. Balakrishnan, P.T. Webster. Appl. Phys. Lett. 120, 031102 (2022). DOI: 10.1063/5.0078809
A.S. Pashchenko, O.V. Devitsky, L.S. Lunin, M.L. Lunina, O.S. Pashchenko. PZhTF 48, 5, 52 (2022) (in Russian). DOI: 10.21883/TPL.2022.05.53481.19164
E.A. Emel'yanov, A.V. Vasev, B.R. Semyagin, M.Yu. Esin, I.D. Loshkarev, A.P. Vasilenko, M.A. Putyato, M.O. Petrushkov, V.V. Preobrazhenskiy. FTP 53, 4, 512 (2019) (in Russian). DOI: 10.1134/S1063782619040092
A.E. Marichev, R.V. Levin, G.S. Gagis, A.B. Gordeeva. J. Phys. Conf. Ser. 741, 012039 (2016). DOI: 10.1088/1742-6596/741/1/01203
K. Alberi, J. Wu, W. Walukiewicz, K.M. Yu, O.D. Dubon, S.P. Watkins, C.X. Wang, X. Liu, Y.-J. Cho, J. Furdyna. Phys. Rev. B, 75, 045203 (2007). DOI: 10.1103/PhysRevB.75.045203
C.A. Broderick, M. Usman, E.P. O'Reilly. Theory of the Electronic Structure of Dilute Bismide Alloys: Tight-Binding and k· p models. In: Bismuth-Containing Compounds / Eds. H. Li, Z. Wang. Springer Series in Materials Science 186. Springer, N. Y. (2013). DOI: 10.1007/978-1-4614-8121-8_3
W. Walukiewicz, J.M.O. Zide. J. Appl. Phys. 127, 010401 (2020). DOI: 10.1063/1.5142248
B.N. Zvonkov, I.A. Karpovich, N.V. Baidus, D.O. Filatov, S.V. Morozov, Yu.Yu. Gushina. Nanotechnology 11, 221 (2000). DOI: 10.1088/0957-4484/11/4/306
S.N. Kabekkodu, A. Dosen, T.N. Blanton. Powder Diffr. 39, 2, 47 (2024). DOI: 10.1017/S0885715624000150 (PDF database file\# 00-007-0215

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