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Growth GaInAsSbBi solid solution on misoriented GaSb(100) 6^o (111)A substrate

Russian version

Pashchenko A.S.

^1,2, Nikulin D.A.

^1,2, Blokhin E.E.

¹Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
²North-Caucasian Federal University, Stavropol, Russia

Email: semicondlab@ssc-ras.ru

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Abstract
References

The paper presents the results of growing solid solutions of GaInAsSbBi by pulsed laser deposition on a misoriented GaSb(100) 6^o (111)A substrate. The results of structural analysis using X-ray diffraction, transmission, electron and atomic force microscopy show that the main growth mechanism is the Volmer-Weber. The films have a polycrystalline structure. Stacking faults, twins and dislocations are present in the film volume. The composition of the films is determined by energy-dispersive microanalysis as Ga_0.75In_0.25As_0.87Sb_0.1Bi_0.03. Keywords: III-V compounds, GaSb, gallium antimonide, solid solutions.

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