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Formation of thin-film resist materials based on organotin oxoclusters promising for electron-beam and extreme ultraviolet nanolithography
Russian version
Zakharina M. Yu. 1, Arsenyeva K. V. 1, Baten'kin M. A. 1, Konev A. N. 1, Kovylin R. S. 1, Lokteva A. A. 1, Pestov A.E. 2, Nechay A.N. 2, Lopatin A.Ya.2, Perekalov A.A. 2, Chesnokov S. A. 1, Piskunov A. V. 1, Fedushkin I. L. 1
1Razuvaev Institute of Organometallic Chemistry, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Institute for Physics of Microstructures of the Russian Academy of Sciences (IPM RAS), Afonino, Kstovsky District, Nizhny Novgorod Region, Russia
Email: m.zakharina@mail.ru, kselenia22@gmail.com, batenkinmax@iomc.ras.ru, alex-kon@mail.ru, Roman@iomc.ras.ru, lokteva@iomc.ras, sch@iomc.ras.ru, pial@iomc.ras.ru, igorfed@iomc.ras.ru
PDF
Conditions for the formation of 10-60 nm thick films on the surface of a single-crystal silicon substrate from organic solutions of alkyl and non-alkyl tin oxoclusters TOC-21 and TinS have been developed. The surface roughness of TOC-21 films is less than 1 nm. Exposure of the films to an electron beam or radiation with a wavelength of 13.5 nm enabled the formation of microstructures of a tin-containing substance on the substrate surface. The results can be used to develop tin-containing resists for electron-beam and extreme ultraviolet (EUV) nanolithography. Keywords: oxo cluster, negative photoresist, thin films, electron beam- nanolithography, EUV- nanolithography.
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