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Luminescence centers in silicon irradiated by femtosecond laser
Russian version
A.E. Kalyadin1, D.S. Polyakov2, V.P. Veiko2, N.A. Sobolev1
1Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
Email: nick@sobolev.ioffe.rssi.ru
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Photoluminescence in silicon grown by Czochralski technique and irradiated by femtosecond Ti:Sapphire laser with a wavelength 780 nm is studied. The formation of a wide band in area of 1.15-1.6 μm, narrow W, H, P- lines and the near-band-edge line is observed in the spectra. Influence of luminescence measurement temperature, wavelength and power of exciting laser on the spectra is investigated. An activation energy of temperature quenching of luminescence intensity and an excitation efficiency of W, H and P- lines are determined. With increasing excitation power, the integral intensity of the wide band increases but the integral intensity of the near-band-edge line decreases. Keywords: silicon, femtosecond laser, point defects, activation energy of temperature quenching of luminescence, luminescence excitation efficiency.
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