Physics of the Solid State
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Revisiting the fine structure of 2p spectra from the (100) silicon surface
Kuzmin M.V.
1, Monyak A.A.
1, Sorokina S. V.
1
1Ioffe Institute, St. Petersburg, Russia
Email: m.kuzmin@mail.ioffe.ru
Using the synchrotron radiation and high-resolution photoelectron spectroscopy (56-66 meV), the fine structure of the 2p spectra from the Si(100) surface at 100 K has been studied in a wide range of electron escape depths. It is shown that these spectra include five surface components. The relationship between their core-level shifts and the atomic and electronic structure of the c(4x2) reconstruction is established. The experimental conditions where the 2p spectra have the greatest sensitivity to the surface and bulk of silicon are determined and, in particular, the inelastic mean free path for electrons in a silicon crystal is obtained as a function of photon energy. The results obtained can be used as reference data in studies of various surface structures on the Si(100) substrate using photoemission techniques. Keywords: surface, photoelectron spectroscopy, core level, surface shift, silicon, inelastic mean free path.
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