h-BN surface modification by scanning probe microscope
Gushchina E. V.1, Malykh D. A1, Dunaevskiy M. S. 1
1Ioffe Institute, St. Petersburg, Russia
Email: katgushch@yandex.ru

PDF
The study demonstrates the possibility of modifying fragments of hexagonal boron nitride layers by bending them with a probe using a scanning probe microscope. The specific ranges of h-BN fragments with a lateral size of about 1 micron have been determined. It was possible to obtain a layer up to 8 monolayers thick from initially thick fragments of h-BN by the layer flip method. Keywords: Hexagonal boron nitride, atomic force microscopy.
  1. A.K. Geim, I.V. Grigorieva. Nature 499, 419 (2013)
  2. A. Razaq, F. Bibi, X. Zheng, R. Papadakis, S.H.M. Jafri, H. Li et. al. Materials 15, 3, 1012 (2022)
  3. S.K. Tiwari, S. Sahoo, N. Wang, A. Huczko. J. Sci.: Adv. Mater. Dev. 5, 1, 10 (2020)
  4. M. Xu, T. Liang, M. Shi, H. Chen. Chem. Rev. 113, 3766 (2013)
  5. S.J. Haigh, A. Gholinia, R. Jalil, S. Romani, L. Britnell, D.C. Elias, K.S. Novoselov, L.A. Ponomarenko, A.K. Geim, R. Gorbachev. Nature Mater. 11, 9, 764 (2012)
  6. A.K. Geim, K.S. Novoselov. Nature Mater. 6, 183 (2007)
  7. H. Sediri, D. Pierucci, M. Hajlaoui, H. Henck, G. Patriarche, Y.J. Dappe, S. Yuan, B. Toury, R. Belkhou, M.G. Silly, F. Sirotti, M. Boutchich, A. Ouerghi. Sci. Rep. 5, 16465 (2015)
  8. B.R. Borodin, M.S. Dunaevskiy, F.A. Benimetskiy, S.P. Lebedev, A.A. Lebedev, P.A. Alekseev. J. Phys.: Conf. Ser. 1124, 081031 (2018)
  9. S. Thomas, M.S. Manju, K.M. Ajith, S.U. Lee, M. A. Zaeem. Physica E 123, 114180 (2020)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru