Dielectric characteristics of heteroepitaxial Sr0.60Ba0.40Nb2O6 thin films grown on a Pt(001)/MgO(001) substrate
Makinyan N. V.1,2, Pavlenko A. V. 1,2
1Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
2Scientific Research Institute of Physics, Southern Federal University, Rostov-on-Don, Russia
Email: norair.makinyan@yandex.ru, tolik_260686@mail.ru

PDF
The structure, surface microstructure, dielectric and ferroelectric characteristics of thin films of barium-strontium niobate Sr0.60Ba0.40Nb2O6 (SBN60) grown on a Pt(001)/MgO(001) substrate have been studied. It is shown that the films are unalloyed, monocrystalline, and by the nature of changes in the dielectric permittivity (ε' and ε'') from the temperature and frequency of the measuring electric field, they are relaxor ferroelectrics. It is established that in the investigated film the Burns temperature is 475 K, the Vogel-Fulcher temperature is 367 K, and in the vicinity of T=150 K there is a phase transition between two ferroelectric phases. It is shown that at room temperature, depending on the electric field strength, the prevailing charge transport mechanisms in SBN60 films are Poole-Frenkel emission and space charge limited current. The reasons for the revealed patterns are discussed. Keywords: dielectric characteristics, relaxor ferroelectric, tetragonal tungsten bronze, leakage currents.
  1. K.M. Rabe, C.H. Ahn, J-M. Triscone. Fizika segnetoelektrikov: sovremennyi vzglyad, Laboratoriya znanij, M., (2011), 440 s. (in Russian)
  2. V.A. Gritsenko, D.R. Islamov. Fizika dielektricheskikh plenok: mekhanizmy transporta zaryada i fizicheskie osnovy priborov pamyati, Parallel, Novosibirsk, (2017), 352 s. (in Russian)
  3. K.A. Vorotilov, V.M. Mukhortov, A.S. Sigov, Integrirovannye segnetoelektricheskie ustroystva, Energoatomizdat, M., (2011), 175 s. (in Russian)
  4. S. Gupta, S. Sharma, T. Ahmad, A.S. Kaushik, P.K. Jha, V. Gupta, M. Tomar. Mater. Chem. Phys. 262, 124300 (2021)
  5. S. Ivanov, E.G. Kostsov. IEEE Sensors J. 20, 16, 9011 (2020)
  6. Yu.S. Kuzminov. Segnetoelektricheskie kristally dlya upravleniya lazernym izlucheniem Nauka, M., (1982), 400 s. (in Russian)
  7. V. Gopal. J. Appl. Phys. 116, 8, 084502 (2014)
  8. G. Velarde, S. Pandya, J. Karthik, D. Pesquera, L.W. Martin. APL Materials 9, 1, 010702 (2021)
  9. C. Zhang, Z. Zeng, Z. Zhu, M. Karami, X. Chen. Phys. Rev. Appl. 14, 6, 064079 (2020)
  10. S. Lee, R.H. Wilke, S. Trolier-McKinstry, S. Zhang, C.A. Randall. Appl. Phys. Lett. 96, 3, 031910 (2010)
  11. H.F. Hung, C.F. Yang, C.C. Wu. Sensors Mater. 29, 4, 397 (2017)
  12. A.V. Pavlenko, S.P. Zinchenko, D.V. Stryukov, A.P. Kovtun. Nanorazmernye plenki niobata bariya-strontsiya: osobennosti polucheniya v plazme vysokochasotnogo razryada, struktura i fizicheskie svoistva, YuNTs RAN, Rostov na D., (2022), 244 s. (in Russian)
  13. A.V. Pavlenko, D.V. Stryukov, L.I. Ivleva, A.P. Kovtun, K.M. Zhidel', P.A. Lykov. FTT 63, 2, 250 (2021). (in Russian)
  14. F.-C. Chiu. Adv. Mater. Sci. Eng. 2014, 1 (2014)
  15. S. Zi. Fizika poluprovodnikovykh priborov, Mir, M., (1984), T. 1, 456 s. (in Russian)
  16. E. Buixaderas, M. Savinov, M. Kempa, S. Veljko, S. Kamba, J. Petzelt, R. Pankrath, S. Kapphan. J. Phys.: Condens. Matter. 17, 4, 653 (2005)
  17. Y. Zhao, J. Wang, L. Zhang, X. Shi, S. Lui, D. Zhang. Ceram. Int. 42, 15, 16697 (2016). doi.org/10.1016/j.ceramint.2016.07.120
  18. V. Krayzman, A. Bosak, H.Y. Playford, B. Ravel, I. Levin. Chem. Mater. 34, 22, 9989 (2022)
  19. L. Hongbo, D. Brahim. J. Alloys Comp. 929, 167314 (2022)
  20. V.V. Gladkiy, V.A. Kirikov, S.V. Nekhlyudov, T.R. Volk, L.I. Ivleva. Pisma v ZhETF 71, 1, 38 (2000). (in Russian)
  21. A.V. Pavlenko, D.A. Kiselev, Ya.Yu. Matyash. FTT 63, 6, 776 (2021). (in Russian)
  22. A.V. Pavlenko, A.P. Kovtun, S.P. Zinchenko, D.V. Stryukov. Pisma v ZhTF 44, 11, 30 (2018). (in Russian)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru