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The Effect Of Surface Passivation Of GaAs-based Cylindrical Mesa Structures On Their Optical Properties
Russian version
Melnichenko I. A. 1,2, Kryzhanovskaya N. V. 1, Ivanov K. A. 1, Nadtochiy A. M. 1,3, Makhov I. S. 1, Kozodaev M. G. 4, Khakimov R. R.4, Markeev A. M. 4, Vorobyev A. A.2, Mozharov A. M.2, Guseva Yu. A. 3, Likhachev A. I. 3, Kolodezny E. S. 5, Zhukov A. E. 1
1High School of Economics, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Moscow Institute of Physics and Technology (National Research University), Dolgoprudniy, Moscow Region, Russia
5 ITMO University, St. Petersburg, Russia
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The optical properties of GaAs-based cylindrical mesa-structures were studied before and after passivation using hydrogen plasma treatment followed by atomic layer deposition of an Al2O3 layer. The In0.2Ga0.8As/GaAs quantum well and the GaAs/AlAs superlattice were used as the light-emitting region of the mesa structures. The diameter of the mesas varied from 3 to 20 μm. The result of passivation was an 8-fold increase in the photoluminescence intensity of 9 μm-diameter mesa at room temperature, and time-resolved photoluminescence studies of such mesa structures demonstrated an increase in charge carrier lifetime from 0.13 to 0.9 ns. Keywords: InGaAs, quantum well, surface passivation, atomic layer deposition.
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