Quantitative Analysis of Film Structures with a Diffuse Interface Studied by Auger Electron Spectroscopy
Remele V. E.1, Mittsev М. A.1, Kuzmin M. V.1
1Ioffe Institute, St. Petersburg, Russia
Email: m.kuzmin@mail.ioffe.ru

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A model is proposed for interpreting the results of Auger electron spectroscopy in the case of film systems with reactive interfaces. A quantitative relationship has been established between the parameters of the transition layer and the shape of dependences of the Auger signal of the substrate on the film thickness in such systems. The model was tested for three rare-earth metal (Yb, Sm, Gd) -Si(111) interfaces. Quantitative data have been obtained concerning their structure and stoichiometric composition, as well as the dependence of these characteristics on the thermodynamic properties of the studied rare earth metals. Keywords: surface, thin films, interface, Auger electron spectroscopy, rare-earth metals, silicon.
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