Physics of the Solid State
Volumes and Issues
Preparation, structural features, elemental composition of and dielectric properties of a two-layer structure based on thin films of multiferroic BiFeO3 and ferroelectric (Sr, Ba)Nb2O6
Pavlenko A. V.1,2, Stryukov D. V.1, Kudryavtsev Yu. A.3, Matyash Ya. Yu.1, Malomyzheva N. V.2
1Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
2Scientific Research Institute of Physics, Southern Federal University, Rostov-on-Don, Russia
3Solid State Electronics Section, Cinvestav, Mexico City, Mexico
Email: Antvpr@mail.ru

PDF
BiFeO heterostructures were manufactured using intermittent sputtering technology on the surface of a single crystal substrate MgO(001) BiFeO3/(Sr, Ba)Nb2O6. Studies of the structure, thickness profile of the composition, surface morphology and dielectric characteristics of materials have been carried out. It is established that despite the formation of two types of orientation domains (±18.4o) in the layer (Sr, Ba)Nb2O6, the upper layer of BiFeO3 is in the ratio of the total parallel orientation with the substrate MgO(001). It is shown that the composition of the films of bismuth ferrite and barium-strontium niobate does not change in film thickness, corresponds to the compositions of the sprayed ceramic targets, no signs of the presence of buffer layers were revealed. The results of the study of dielectric and ferroelectric characteristics of the heterostructure are presented. The reasons for the revealed patterns are discussed. Keywords: thin films, heterostructure, barium-strontium niobate, bismuth ferrite.
  1. Ferroelectric physics. Modern View / Ed . K.M. Rabe, C.G. An, J.-M. Triscon. Translated from English BINOM. Laboratoriya znanij, M. (2011). 440 p. (in Russian)
  2. I.A. Verbenko, E.B. Glazunova, C.I. Dudkina, L.A. Reznichenko. Ekologicheski chistyie intellektualnyie materialy s osobymi elektricheskimi i magnitnymi svoistvami. Puti poiska: modifitsirovanie. Foundation of Science and Education, Rostov-on-Don. (2020). T. 1. 328 p. (in Russian)
  3. A.A. Bukharaev, A.K. Zvezdin, A.P. Pyatakov, Yu.K. Fetisov. UFN, 188, 12, 1288 (2018) (in Russian)
  4. D.V. Strukov, V.M. Mukhortov, Yu.I. Golovko, S.V. Biryukov. FTT 60, 1, 113 (2018)
  5. B. He, Z. Wang. ACS Appl. Mater. Interfaces 8, 6736 (2016)
  6. D.P. Pavlov, I.I. Piyanzina, V.M. Mukhortov, A.M. Balashov, D.A. Tayursky, I.A. Garifullin, R.F. Mamin. Pis'ma v ZhETF 106, 7, 440 (2017). (in Russian)
  7. S. Gupta, S. Sharma, T. Ahmad, A.S. Kaushik, P.K. Jha, V. Gupta, M. Tomar. Mater. Chem. Phys. 262, 124300 (2021)
  8. A.V. Pavlenko, D.V. Stryukov, L.I. Ivleva, A.P. Kovtun, K.M. Zhidel', P.A. Lykov. FTT 63, 2, 776 (2021). (in Russian)
  9. A.V. Pavlenko, D.V. Stryukov, S.P. Kubrin. FTT 64, 2, 218 (2022). (in Russian)
  10. A.V.Pavlenko, S.P.Zinchenko, D.V. Stryukov, A.G. Fedorenko, A. Nazarenko. Neorgan. materialy 57, 4, 398 (2021). (in Russian)
  11. Yu. Kudryavtsev, S. Gayardo, A. Viegas, G. Ramirez, R. Azomosa. Izv. RAN. Ser. fiz. 72, 7, 949 (2008). (in Russian)
  12. A.R. Hippel. Dielektriki i volny. Translated from English / Ed. N.T. Drozdova. IL, M. (1960). 438 p. (in Russian)
  13. A.S. Bogatin, A.V. Turik. Relaxation polarization processes in dielectrics with high through conductivity. Fenix, Rostov n/D (2013).256 p. (in Russian)
  14. A.V. Pavlenko, I.N. Zakharchenko, A.S. Anokhin, Yu.A. Kuprina, L.And Kiseleva, Yu.I. Yuzyuk. FTT 59, 5, 88 (2017). (in Russian)
  15. R. Yinjuan, Z. Xiaohong, Z. Caiyun, Z. Jiliang, Z. Jianguo, X. Dingquan. Ceram.Int. 40, 1, 2489 (2014)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru