The role of diffusion of photoexcited electrons from heavily doped layers in the photoconductivity of AlAs/GaAs heterostructures
Vdovin E. E.1, Khanin Yu. N.1
1Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia

Based on the study of photoconductivity in GaAs / AlAs p-i-n heterostructures in the visible light range, the dominant role of the diffusion channel of photoexcited electrons from heavily doped layers in the formation of photocurrent oscillations from the bias voltage and the determining contribution of this channel to the total current through the structure is shown. A qualitative model of the transport of excited carriers is considered, which assumes the diffusion channel as the main source of photooscillations. Keywords: heterostructures, photoconductivity.
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