Physics of the Solid State
Volumes and Issues
Superconducting thin films and tunnel junctions based on aluminum
Tarasov M. A. 1, Chekushkin A. M. 1, Fominsky M. Yu. 1, Zaharov D. M.2, Lomov A. A.2, Devitsky O. V.3,4, Gunbina A. A. 5, Sohina E. T.6,7, Edelman V. S.7
1Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2Valiev Institute of Physics and Technology of RAS, Moscow, Russia
3Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
4North-Caucasian Federal University, Stavropol, Russia
5Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia
6National Research University Higher School of Economics, Moscow, Russia
7Kapitza Institute for Physical Problems, Russian Academy of Sciences, Moscow, Russia

The features of conductivity in aluminum films produced by various methods are described depending on the presence of impurities, film thickness, and deposition conditions. The results of measuring the surface properties and crystal structure of fabricated films of aluminum, aluminum oxide, and aluminum nitride by X-ray diffraction and atomic force microscopy are presented. SIS, SIN, NIN junctions based on aluminum were fabricated using both shadow evaporation and magnetron sputtering. The current-voltage characteristics were measured. The prospects for improving the characteristics of aluminum SIS junctions, SQUID amplifiers, and SINIS detectors operating at temperatures of about 100 mK are discussed. Keywords: aluminum thin films, surface roughness, atomically smooth films, tunnel junctions.
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