A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer BaxSr1-xTiO3
Belorusov D. A.1, Goldman E. I.1, Chucheva G. V.1
1Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
Email: gvc@ms.ire.mssi.ru

High-frequency measurements of the capacitance and conductivity of Ni-Ba0.8Sr0.2TiO_3-Pt and Ni-Ba0.8Sr0.2TiO_3-Si objects with a ferroelectric thickness of 120 nm in the paraelectric phase were carried out. It is shown that in the entire range of external voltages, the electric field practically does not penetrate Si. The conclusion made earlier about the reasons for the weak manifestation of the field effect is confirmed - the polarization of the ferroelectric layer is almost completely shielded by the charges of electronic traps at the Ba0.8Sr0.2TiO_3-Si contact. It is noted that a sharp decrease due to passivation of the activity of surface traps will allow implementing transistors based on metal-BST-Si structures with a working surface channel of non-basic charge carriers and will ensure the construction of high-quality FeRAM non-volatile memory cells. Keywords: metal-dielectric-semiconductor-structures, metal-dielectric-metal-structures, ferroelectric films of the composition Ba0.8Sr0.2TiO3, high-frequency impedance.
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