Physics of the Solid State
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Study of relaxers distribution in thin layers of amorphous MoTe2
Castro Arata R. A.1, Khachaturov S. E.1, Kononov A. A.1, Anisimova. N. I.1
1Herzen State Pedagogical University of Russia, St. Petersburg, Russia
Email: recastro@mail.ru

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Recently, transition metal dichalcogenides have come into the spotlight after they have been found to become direct semiconductor in the monolayer level. The paper presents the results of the study of the relaxers distribution in layers of amorphous molybdenum ditelluride obtained by high-frequency magnetron sputtering. According to the obtained values of relaxation parameters α and β, the transition from an asymmetric distribution to a symmetric distribution of relaxators at temperature T=283 K can be stated. The existence of maxima on the temperature dependence of relaxation times taumax=f(T) was found, which can be associated with phase transitions in the studied system. Keywords: molybdenum ditelluride, relaxers distribution, thin layers, phase transitions.
  1. R.A. Castro, G.A. Bordovsky, V.A. Bordovsky, N.I. Anisimova. J. Non-Crystall. Solids 352, 9-20, 1560 (2006)
  2. V.A. Bordovskii, R.A. Kastro, G.I. Grabko, T.V. Taturevich. Glass Phys. Chem. 32, 2, 178 (2006)
  3. R.A. Castro, V.A. Bordovsky, N.I. Anisimova, G.I. Grabko. Semiconductors 43, 3, 365 (2009)
  4. K. Kremer, A. Schonhals A. Broadband dielectric spectroscopy. Springer, Berlin Heidelberg (2003). 729 p
  5. K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz. Phys. Rev. Lett. 105, 13, 136805 (2012)
  6. X. Xu, W. Yao, D. Xiao, T.F. Heinz. Nature Phys. 10, 5, 343 (2014)
  7. K.F. Mak, K. He, J. Shan, T.F. Heinz. Nature Nanotechnology 7, 8, 494 (2012)
  8. W. Chen, R. Liang, J. Wang, S. Zhang, J. Xu. Sci. Bull. 63, 15, 997 (2018)
  9. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis. Nature Nanotechnology 6, 3, 147 (2011)
  10. B. Radisavljevic, M.B. Whitwick, A. Kis. ACS Nano 5, 12, 9934 (2011)
  11. N.A. Nikonorova, M.Y. Balakina, O.D. Fominykh, A.V. Sharipova, T.A. Vakhonina, G.N. Nazmieva, R.A. Castro, A.V. Yakimansky. Mater. Chem. Phys. 181, 217 (2016)
  12. R.A. Castro, A.I. Ignatiev, N.V. Nikonorov, A.I. Sidorov, M.V. Stolyarchuk. J. Non-Crystalline Solids 461, 72 (2017)
  13. R.A. Castro, N.I. Anisimova, A.A. Kononov. Semiconductors 52, 8, 1043 (2018)
  14. S. Havriliak, S. Negami. Polymer 8, 161 (1967)
  15. J.C. Giuntini, J.V. Zanchetta, D. Jullien, R. Eholie, P. Houenou. J. Non-Crystalline Solids 45, 57 (1981)
  16. H.P. Hughes, R.H. Friend. J. Physics C 11, 3, L103 (1978)
  17. R. Clarke, R.E. Morley. J. Appl. Crystallography 9, 6, 481 (1976)
  18. A.M. Glazer. J. Appl. Crystallography 5, 6, 420 (1972)
  19. S. Dissanayake, C. Duan, J. Yang, J. Liu, M. Matsuda, C. Yue, J.A. Schneeloch, J.C.Y. Teo, D. Louca. npj Quantum Mater. 4, 1, 45 (2019)
  20. J. Yang, J. Colen, J. Liu, M.C. Nguyen, G.W. Chern, D. Louca. Sci. Adv. 3, 12, 4949 (2017)
  21. L.A. Dissado, R.M. Hill. J. Appl. Phys. 66, 6, 2511 (1989)

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