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Sprayed NiO-Doped p-Type Transparent ZnO Thin Films Suitable for Gas-Sensing Devices
Полная версия: 10.1134/S1063783420010060
Aoun Y.1,2, Meneceur R.1, Benramached S.2, Maaoui B.3
1Mechanical Department, Faculty of Technology, University of El-Oued, Algeria
2Laboratoire de Physique Photonique et Nanomateriaux Multifonctionnels, University of Biskra, Algeria
3VTRS Laboratory, Institute of Technology, University of El-Oued, Algeria
Email: aounyacine07@gmail.com
Поступила в редакцию: 27 августа 2019 г.
Выставление онлайн: 20 декабря 2019 г.

The spray pneumatic method has been successfully employed for the preparation of polycrystalline NiO-doped ZnO thin films. The effect of NiO content (0, 1, 2, 3, and 6 at.%) is studied on structural, optical, and electrical properties of NiO-doped ZnO thin films. The thin films were successfully deposited on a glass substrate at 450oC using the organic solar heater. XRD patterns of NiO-doped ZnO thin films indicate that the obtained ZnO thin films are polycrystalline with (100), (002), and (101) highest peaks of ZnO phase. However, alpha-Ni(OH)2 and beta-Ni(OH)2 were observed at 6 and 3 at.% NiO, respectively. The crystal structure was improved for doped thin films, the crystallite size decreased by increasing the NiO content up to 6 at.% NiO. All thin films have a high optical transmission in the visible region of about 85%. The optical band gap energy decreased from 3.26 eV for 0% to 3.34 eV for 1 at.%, and further decreased to 3.27 eV for 6 at.% NiO. The thin film deposited with 3 at.% NiO has the lowest value of Urbach energy (0.091 eV). The electrical conductivity of the NiO-doped ZnO films increased greatly from 0.016 (Omega·cm)-1 for 0% NiO to 0.042 (Omega·cm)-1 for 3 at.% NiO. It can be noted that the deposited film after 3 at.% NiO is a p-type semiconductor. Keywords: ZnO, thin films, NiO-doping, transparent conductive oxides (TCO), spray pneumatic method.

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