Вышедшие номера
Investigation of Thermoelectric Power of CuInGaTe2 Single Crystals
Полная версия: 10.1134/S106378342001028X
Salem A.1, Mohammed J.A.2, Hussein S.A.1, Salwa A.S.1,3
1Solid State Lab., Physics Department, Faculty of Science, South Valley University, Qena, Egypt
2Physics Department, Umm Al-Qura University College in Qunfudah-Female, KSA
3Faculty of Art And Science, Aljouf University, KSA
Email: aasalem@kku.edu.sa
Поступила в редакцию: 21 июля 2019 г.
Выставление онлайн: 20 декабря 2019 г.

Thermoelectric power values of CuInGaTe2 (CIGT) single crystals were estimated without precedent for a wide temperature range. An authorial unique design dependent on Bridgman procedure for crystal growth from the melt has been utilized to prepare our sample. The single crystals show a p-type conductivity within the full range of temperature. Experimental examination has been made of the variety of electrical conductivity and thermoelectric power with CIGT single crystals. The holes and electrons effective masses, the mobilities of the electrons and holes, and the diffusion length of the majority and minority carriers were determined at room temperature. The electron and hole diffusion coefficients in CIGT single crystals are Dn=7.938 m2/s and Dp=7.365 m2/s, respectively. Additionally, the holes and electrons relaxation times were derived from the mobilities. These outcomes give us a complete and clear picture for the main physical parameters essential for the industrial applications. Keywords: chalcopyrite semiconductors, thermoelectric power, CuInGaTe2 single crystals.

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