Вышедшие номера
Photoconductivities of Nanocrystalline Vanadium Pentoxide Thin Film Grown by Plasma Rf Magnetron Sputtering at the Different Condition of Deposition
Полная версия: 10.1134/S1063783420010175
Khalaf M.K.1, Hassan N.K.2, Khudiar A.I.1, Salman I.K.2
1Center of Applied Physics, Directorate of Materials Research, Ministry of Sciense and Technology, Baghdad, Iraq
2Dept. of Physics, College of Science, University of Tikrit, Baghdad, Iraq
Email: ausamaikhudiar@yahoo.com
Поступила в редакцию: 29 июля 2019 г.
Выставление онлайн: 20 декабря 2019 г.

In this study, the fabrication and characterization of a metal--semiconductor--metal (MSM) visible photodetector based on V2O5 were investigated. The V2O5 thin film was synthesized on n-type Si (100) as substrate by plasma RF-sputtering. The photoconductivity of the nanocrystalline vanadium pentoxide (V2O5|Si) was investigated at the different conditions of deposition (i. e. RF-sputtering power, pressure, and substrate temperature). The photoconductivity measurement of this work was performed in the darkness and under illumination, with applied voltage from a range of 0.1-10 V and illumination intensity 9.8 mW/cm2. I-V characteristics under illumination showed that the films prepared from V2O5 on the basis of n-Si have good efficiency and the best is at power 150 W, pressure 0.03 Torr, and temperature 473 K. The fabricated photoconductive detector showed the spectral response (Rλ) value of 0.0783 AW-1, quantum efficiency 18.04%, spectral detectivity D*=6.984·109 cm·Hz1/2·W-1 at wavelength 600 nm, and low spectral responsivity in the UV region. Keywords: vanadium pentoxide, photoconductivity, physical vapour deposition, plasma RF-sputtering.

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