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Excitons in PL spectra of Cu(In, Ga)Se2 single crystal *
Skidchenko E.1,2,3, Yakushev M.V.4,5,6, Spasevski L.2, Edwards P.R.2, Sulimov M.A.4,5, Martin R.W.2
1Skolkovo Institute of Science and Technology, Skolkovo Innovation Centre, Moscow, Russia
2Department of Physics, SUPA, University of Strathclyde, G4 0NG Glasgow, UK
3Department of Plasma Technology and Nanotechnology of High Molecular Weight Materials, Kazan National Research Technological University, Kazan, Russia
4M.N. Mikheev Institute of Metal Physics of the UB RAS, Ekaterinburg, Russia
5Ural Federal University, Ekaterinburg, Russia
6Institute of Solid State Chemistry of the UB RAS, Ekaterinburg, Russia
Email: sulimov.m.a@gmail.com
Выставление онлайн: 19 апреля 2019 г.

A photoluminescence (PL) study of Cu(In, Ga)Se2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7% and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7% and 12% Ga content are clearly observed, analysed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material. This research was supported by the Russian Science Foundation (grant 17-12-01500).
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