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Basic requirements of spin-flip Raman scattering on excitonic resonances and its modulation through additional high-energy illumination in semiconductor heterostructures
Переводная версия: 10.1134/S1063783418080036 
1Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, Germany 
2Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
3Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia
4Ural Federal University, Yekaterinburg, Russia
5Department Physik, Universitat Paderborn, Paderborn, Germany
6Angewandte Festkorperphysik, Ruhr-Universitat, Bochum, Bochum, Germany
7Institute of Semiconductor Technology, University of Braunschweig, Braunschweig, Germany
2Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
3Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia
4Ural Federal University, Yekaterinburg, Russia
5Department Physik, Universitat Paderborn, Paderborn, Germany
6Angewandte Festkorperphysik, Ruhr-Universitat, Bochum, Bochum, Germany
7Institute of Semiconductor Technology, University of Braunschweig, Braunschweig, Germany
Email: joerg.debus@tu-dortmund.de
Выставление онлайн: 20 июля 2018 г.
We describe the major requirements to experimentally perform and observe resonant spin-flip Raman scattering on excitonic resonances in low-dimensional semiconductors. We characterize in detail the properties of this resonant light scattering technique and evaluate the criteria, which must be fulfilled by the experimental setup and the semiconductor sample studied to be able to observe a spin-flip scattering process. We also demonstrate the influence of additional unpolarized laser illumination with energies, which exceed considerably the band gap energy of the semiconductor nanostructure under study, on the resonantly excited electron spin-flip scattering in InAs-based quantum dot ensembles as well as on the paramagnetic Mn-ion spin-flip in (Zn,Mn)Se/(Zn,Be)Se quantum wells. We acknowledge financial support by the DFG and RFBR in the frame of the ICRC TRR 160 (Project B2).
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