Вышедшие номера
Interfacial ferromagnetism in a Co/CdTe ferromagnet/semiconductor quantum well hybrid structure
Переводная версия: 10.1134/S1063783418080139
Kalitukha I.V.1, Salewski M.2, Akimov I.A.2,1, Korenev V.L.1, Sapega V.F.1, Yakovlev D.R.2,1, Karczewski G.3, Wiater M.3, Wojtowicz T.3,4, Kusrayev Yu.G.1, Bayer M.2,1
1A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, Germany
3Institute of Physics, Polish Academy of Science, Warsaw, Poland
4International Research Centre MagTop, P Warsaw, Poland
Email: kalitukha@gmail.com
Выставление онлайн: 20 июля 2018 г.

The magnetization properties of a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure are investigated by several techniques. Exploiting the proximity effect between acceptor bound holes and magnetic ions we detect the magnetization curves by measuring the circular polarization of photoluminescence in an out-of-plane magnetic field. We show that magnetization originates from interfacial ferromagnet on Co-CdMgTe surface and the proximity effect is caused by magnetization of interfacial Co-CdMgTe ferromagnetic layer whose magnetic properties are very different from Co. These studies were supported by the Deutsche Forschungsgemeinschaft through the International Collaborative Research Centre 160 (Projects C2, B2, and B4). Luminescence studies were supported through the program "Forschungsgrob gerate Art. 91b" (INST 212/312-1) coordinated by Deutsche Forschungsgemeinschaft. The partial financial support from the Russian Foundation for Basic Research Grant No. 15-52-12017 NNIOa and the Russian Ministry of Education and Science (Contract No. 14.Z50.31.0021) is acknowledged. The research in Poland was partially supported by the National Science Centre (Poland) through Grants No. DEC-2012/06/A/ST3/00247 and No. DEC-2014/14/M/ST3/00484, as well as by the Foundation for Polish Science through the IRA Programme co-financed by EU within SG OP.
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