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Influence of the Disorder in Doped Germanium Changed by Compensation on the Critical Indices of the Metal-Insulator Transition
Rentzsch Rolf1, Ionov A.N.2, Reich Ch.1, Ginodman V.3, Shlimak I.3, Fozooni P.4, Lea M.J.4
1Freie Universitat Berlin, FB Physik, WE I, Institut fur Ex-physik, Berlin, Germany
2A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
3The Resnick and Pearl Inst. Bar-Ilan University, Dept. of Physics, Ramat-Gan, Israel
4Department of Physics, Royal Holloway University of London, Egham, Surrey, UK
Email: rentzsch@physik.fu-berlin.de
Выставление онлайн: 19 апреля 1999 г.

We present a critical review of the present status of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with the emphasis on the role of mesos- and macroscopically inhomogeneity caused by the disorder of intended or unintended acceptors and donors in the crystals. By using both the isotopic engineering and the neutron transmutation doping (NTD) of Germanium we found for low compensations (at K=1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly nu=1/2 and zeta=1, which double for medium compensations (at K=38 and 54%) to nu=1 and zeta=2, respectively.
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