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Growth and characterization of ferroelectric SrBi2Ta2O9 single crystals via high-temperature self-flux solution method
Amori n H.1, Bdikin I.K.1,2, Kholkin A.L.1, Costa M.E.V.1
1Department of Ceramics and Glass Engineering & Center for Research in Ceramic and Composite Materials (CICECO), University of Aveiro,-193 Aveiro, Portugal
2Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia
Email: kholkin@cv.ua.pt
Поступила в редакцию: 24 июня 2005 г.
Выставление онлайн: 17 февраля 2006 г.

SrBi2Ta2O9 (SBT) single crystals were produced by high temperature self-flux solution method using a Bi2O3 flux modified with B2O3. The processing conditions were optimized to obtain large and translucent SBT crystals with a layered habit and typical dimensions of approximately 7-1ptx-1pt5-1ptx-1pt0.2 mm. X-ray diffraction and x-ray topography measurements revealed the major faces of the crystals with natural rectangular platelet morphology are perfectly (001)-orientated with edges directed along the [110] directions. High quality of the crystals was confirmed by rocking curves (half width of 0.04o for the (0 0 18) reflection) and by ferroelectric measurements. The anisotropy in the dielectic and ferroelectric properties was investigated both along the [110] (ab-plane) and the [001] (c-axis) directions. The growth mechanism, morphology and dielectric anisotropy of the SBT crystal platelets are discussed based on its crystallographic structure. H. Amori n and I.K. Bdikin acknowledge the Foundation for Science and Technology (FCT, Portugal) for the financial support through Ph.D. and Postdoctoral grants, respectively. PACS: 77.84.-s, 81.10.-h
  • C.A. Paz de Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, J.F. Scott. Nature 374, 6523, 627 (1995)
  • J.F. Scott, F.M. Ross, C.A. Paz de Araujo, M.C. Scott, M. Huffman. Mater. Res. Soc. Bull. 21, 7, 33 (1996).
  • O. Auciello, J.F. Scott, R. Ramesh. Physics Today 51, 7, 22 (1998)
  • K. Amanuma, T. Hase, Y. Miyasaka. Appl. Phys. Lett. 66, 2, 221 (1995)
  • R. Dat, J.K. Lee, O. Auciello, A.I. Kingon. Appl. Phys. Lett. 67, 4, 572 (1995)
  • P.Y. Chu, R.E. Jones, P. Zurcher, D.J. Taylor, B. Jiang, S.J. Gillespie, Y.T. Lii, M. Kottke, P. Fejes, W. Chen. J. Mater. Res. 11, 5, 1065 (1996)
  • S.E. Cummins, L.E. Cross. J. Appl. Phys. 39, 5, 2268 (1968)
  • R.E. Newnham, R.W. Wolfe, J.F. Dorrian. Mater. Res. Bull. 6, 10, 1029 (1971)
  • R. Clarke, R.W. Whatmore. J. Crystal Growth 33, 1, 29 (1976)
  • N. Setter, L.E. Cross. J. Crystal Growth 50, 2, 555 (1980)
  • B.N. Sun, R. Boutellier, Ph. Sciau, E. Burkhardt, V. Rodriguez, H. Schmid. J. Crystal Growth 112, 1, 71 (1991)
  • S.K. Kim, M. Miyayama, H. Yanagida. J. Ceram. Soc. Jpn. 102, 8, 722 (1994)
  • H. Irie, M. Miyayama, T. Kudo. J. Appl. Phys. 90, 8, 4089 (2001)
  • R. Aoyagi, H. Takeda, S. Okamura, T. Shiosaki. Mater. Res. Bull. 38, 1, 25 (2003)
  • M. Susaki, N. Nagasawa, A. Machida, T. Ami. Jpn. J. Appl. Phys. 35, 5A, L564 (1996)
  • A. Machida, N. Nagasawa, T. Ami, M. Suzuki. Jpn. J. Appl. Phys. 37, 2A, 795 (1999)
  • B. Sih, J. Tang, M. Dong, Z.-G. Ye. J. Mater. Res. 16, 6, 1726 (2001)
  • D. Elwell, H.J. Shell. Crystal Growth from High Temperature Solution. Academic Press, N.Y. (1975). Vol. 3. 634 p
  • E.C. Subbarao. J. Phys. Chem. Sol. 23, 665 (1962)
  • J. Robertson, W. Chen, W.L. Warren, C.D. Gutleben. Appl. Phys. Lett. 69, 12, 1704 (1996)
  • A.D. Rae, J.G. Thompson, R.L. Withers. Acta Crystalogr. Sec. B 48, 4, 418 (1992)
  • W. Tolksdorf. Handbook of Crystal Growth: Bulk Crystal Growth, Flux Growth / Ed. D.T.J. Hurle. Elsevier Science B.V., North Holland (1994). Vol. 2. N 10. P. 563
  • I.K. Bdikin, I.M. Shmytko, A.M. Balbashov, A.V. Kazansky. J. Appl. Crystallogr. 26, 71 (1993)
  • I. Bdikin, A. Maljuk, S. Watauchi, I. Tanaka, G. Emel'chenko. Physica C 336, 3--4, 244 (2000)
  • H. Amorin, M.E.V. Costa, A.L. Kholkin, J.L. Baptista. J. Eur. Ceram. Soc. 24, 6, 1535 (2004)
  • N. Nagasawa, A. Machida, A. Ami, M. Suzuki. J. Ceram. Soc. Jpn. 106, 5, 477 (1998)
  • Y. Shiohara, A. Endo. Mater. Sci. Eng. R 19, 1--2, 1 (1997)
  • P. Hartman. Crystal Growth: An Introduction. North--Holland, Amsterdam (1973). 531 p
  • R.F.P. Grimbergen, H. Meekes, P. Bennema, C.S. Strom, L.J.P. Vogels. Acta Crystallogr. Sec. A 54, 4, 491 (1998)
  • Y. Shimakawa, Y. Kubo, Y. Nakagawa, S. Goto, T. Kamiyama, H. Asano, F. Izumi. Phys. Rev. B 61, 10, 6559 (2000)
  • H. Amorin, V.V. Shvartsman, A.L. Kholkin, M.E.V. Costa. Appl. Phys. Lett. 85, 23, 5667 (2004)
  • S. Kamba, J. Pokorny, V. Porokhonsky, J. Petzelt, M.P. Moret, A. Garg, Z.H. Barber, R. Zallen. Appl. Phys. Lett. 81, 6, 1056 (2002)
  • A. Onodera, K. Yoshio, H. Yamashita. Jpn. J. Appl. Phys. 42, 9B, 6218 (2003)
  • J.-H. Ko, A. Hushur, S. Kojima, B.C. Sih, Z.G. Ye. Appl. Phys. Lett. 81, 21, 4043 (2002)
  • H. Irie, M. Miyayama. Appl. Phys. Lett. 79, 2, 251 (2001).
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