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Synchrotron photoemission study of zinc-modified oxide/GaSb film structures
Russian version
Sorokina S.V. 1, Khvostikov V.P. 1, Kuzmin M. V. 1
1Ioffe Institute, St. Petersburg, Russia
Email: svsorokina@mail.ioffe.ru
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GaSb-based device structures obtained by zinc diffusion from the gas phase have been studied by means of high-resolution photoelectron spectroscopy using the synchrotron radiation. It is shown that the method of creating the oxide film on GaSb significantly affects the Zn atomic concentration in the subsurface area of the substrate, and that this impurity, in turn, improves the useful properties of the passivation layer. The results demonstrate the high potential of photoelectron spectroscopy for the characterization of semiconductor device structures at the atomic level. Keywords: synchrotron-radiation photoelectron spectroscopy, GaSb, oxide, diffusion, photovoltaic converter.
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