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High-frequency conductivity of a metal nanolayer taking into account the size quantization effects and conductor band structure anisotropy
Russian version
Savenko O. V. 1, Kuznetsova I. A. 1
1Demidov State University, Yaroslavl, Russia
Email: savenko.oleg92@mail.ru, kuz@uniyar.ac.ru
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A theoretical task solution of metallic nanolayer high-frequency electrical conductivity is obtained, taking into account the electron quantum confinement effects. The conductor Fermi surface is an ellipsoid of revolution with its principal axis oriented parallel to the nanolayer plane. It is assumed that the electric field frequency does not exceed the plasma resonance frequency. Analytical expressions are derived for the conductivity tensor components, depending on the dimensionless parameters: nanolayer thickness, electric field frequency, nanolayer boundary roughness parameters and Fermi surface ellipticity parameter. A comparative analysis of the obtained results with known experimental data for a bismuth film is performed. Keywords: nanolayer, conductivity, Liouville equation, Soffer model, Fermi surface.
  1. S. Datta. Quantum transport: Atom to Transistor (Cambridge University Press, NY., 2005)
  2. C.P. Poole, F.J. Owens. Introduction to Nanotechnology (Wiley, 2003)
  3. V.Yu. Kireev. Vvedenie v tekhnologii mikroelektroniki i nanotekhnologii (Tsentr. Nauchno-Issled. Inst. Khim. Mekh., M., 2008) (in Russian)
  4. S.A. Yakovlev, I.Yu. Dmitriev, M.Yu. Mikhailov, K.V. Emtsev, A.S. Abramov, E.I. Terukov. Tech. Phys., 69 (10), 1580 (2024). DOI: 10.61011/JTF.2024.10.58865.173-24
  5. V.A. Nebol'sin, N. Swaikat, A.Yu. Vorob'ev, V.A. Yuryev. Tech. Phys. Lett., 49 (1), 75 (2023). DOI: 10.21883/TPL.2023.01.55355.19285
  6. A. Cavaleiro, J.Th.M. Hosson. Nanostructured Coatings (Springer, New York, 2006)
  7. K. Barmak, A. Darbal, K.J. Ganesh, P.J. Ferreira, J.M. Rickman, T. Sun, B. Yao, A.P. Warren, K.R. Coffey. J. Vac. Sci. Tech. A, 32, 061503 (2014). DOI: 10.1116/1.4894453
  8. L. Moraga, K.F. Arenas, R. Henriquez, S. Bravo, B. Solis. Physica B: Condens. Matt., 499, 17 (2016). DOI: 10.1016/j.physb.2016.07.001
  9. T. Zhou, D. Gall. Phys. Rev. B, 97, 165406 (2018). DOI: 10.1103/PhysRevB.97.165406
  10. R.L. Graham, G.B. Alers, T. Mountsier, N. Shamma, S. Dhuey, S. Cabrini, R.H. Geiss, D.T. Read, S. Peddeti. Appl. Phys. Lett., 96, 042116 (2010). DOI: 10.1063/1.3292022
  11. A.A. Pribylov. J. Vac. Sci. Tech. B, 39, 022804 (2021). DOI: 10.1116/6.0000781
  12. I.A. Kuznetsova, O.V. Savenko, A.A. Yushkanov. Tech. Phys., 62 (12), 1766 (2017). DOI: 10.1134/S1063784217120143
  13. P.A. Kuznetsov, O.V. Savenko, A.A. Yushkanov. Tech. Phys., 65 (12), 1912 (2020). DOI: 10.1134/S1063784220120130
  14. L. Sheng, D.Y. Xing, Z.D. Wang. Phys. Rev. B, 51, 7325 (1995). DOI: 10.1103/PhysRevB.51.7325
  15. R.C. Munoz, C. Arenas. Appl. Phys. Rev., 4, 011102 (2017). DOI: 10.1063/1.4974032
  16. A.E. Meyerovich, A. Stepaniants. J. Phys.: Condens. Matter, 12, 5575 (2000). DOI: 10.1088/0953-8984/12/26/305
  17. S. Chatterjee, A.E. Meyerovich. Phys. Rev. B, 84, 165432 (2011). DOI: 10.1103/PhysRevB.84.165432
  18. I.A. Kuznetsova, O.V. Savenko, D.N. Romanov. Phys. Lett. A, 427, 127933 (2022). DOI: 10.1016/j.physleta.2022.127933
  19. S.B. Soffer. J. Appl. Phys., 38 (4), 1710 (1967)
  20. O.V. Savenko, I.A. Kuznetsova. Proc. SPIE, 12157, 121570W (2022). DOI: 10.1117/12.2622544
  21. B.A. Tavger, V.Ya. Demikhovskiv i. Sov. Phys. Usp., 11, 644 (1969). DOI: 10.1070/PU1969v011n05ABEH003739
  22. V.S. Edel'man. Sov. Phys. Usp., 20, 819 (1977). DOI: 10.1070/PU1977v020n10ABEH005467
  23. E.V. Demidov, V.M. Grabov, V.A. Komarov, A.N. Krushelnitckii, A.V. Suslov, M.V. Suslov. Semiconductors, 53 (6), 727 (2019). DOI: 10.1134/S1063782619060046
  24. G.A. Ivanov, V.M. Grabov. Fiz. Tekh. Poluprovodn., 29 (5), 1040 (1995) (in Russian)
  25. L.A. Fal'kovskivi. Sov. Phys. Usp, 11 (1), 1 (1968). DOI: 10.1070/PU1968v011n01ABEH003 721
  26. M.V. Suslov, V.M. Grabov, V.A. Komarov, E.V. Demidov, S.V. Senkevich, A.V. Suslov. Semiconductors, 53, 589 (2019). DOI: 10.1134/S1063782619050257
  27. K. Blum. Density Matrix Theory and Applications (Springer, 1981)
  28. V.P. Kurbatsky, V.V. Pogosov. Phys. Rev. B, 81, 155404 (2010). DOI: 10.1103/PhysRevB.81.155404
  29. O.V. Savenko, P.A. Kuznetsov, I.A. Kuznetsova. J. Phys.: Conf. Series. 1697, 012094 (2020). DOI: 10.1088/1742-6596/1697/1/012094
  30. A. Zaitsev, P. Demchenko, E. Makarova, A. Tukmakova, N. Kablukova, A. Asach, A. Novotelnova, M. Khodzitsky. Phys. Stat. Sol. RRL. 14, 2000093 (2020). DOI: 10.1002/pssr.202000093
  31. C.A. Hoffman, J.R. Meyer, F.J. Bartoli. Phys. Rev. B, 48 (15), 11431 (1993). DOI: 10.1103/PhysRevB.48.11431
  32. D.E. Marti nez-Lara, R. Gonzalez-Campuzano, D. Mendoza. Thin Solid Films, 821, 140678 (2025). DOI: 10.1016/ j.tsf.2025.140678

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