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Electric potential of micro-sized blocks at the NaNbO3 film surface
Russian version
Bunin M. A. 1, Yorshin V. A.1, Chumachenko K. S.1, Raevskii I. P. 1
1Southern Federal University, Research institute of Physics, Rostov-on-Don, Russia
Email: bunin.m.a@gmail.com
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The properties of the inherent electric potential of a ~0.1 μm2 - size blocks at the NaNbO3 film surface grown under conditions of unstable misfit strain are analyzed. The results are applied in a qualitative model of injected charge dissipation taking into account the potential of these blocks Keywords: sodium niobate, thin film, surface, electric potential, electric charge, misfit strain, electret.
  1. T. Mikolajick, S. Slesazeck, H. Mulaosmanovic, M.H. Park, S. Fichtner, P.D. Lomenzo, M. Hoffmann, U. Schroeder. J. Appl. Phys., 129, 100901 (2021). DOI: 10.1063/5.0037617
  2. A.R. Damodaran, J.C. Agar, S. Pandya. J. Phys.: Condens. Matter., 28, 263001 (2016). DOI: 10.1088/0953-8984/28/26/263001
  3. Y. Shiratori, A. Magrez, J. Dornseiffer, F.-H. Haegel, C. Pithan, R. Waser. J. Phys. Chem. B, 109, 20122 (2005). DOI: 10.1021/jp052974p
  4. T.M. Shaw, S. Trolier-McKinstry, P.C. McIntyre. Annu. Rev. Mater. Sci., 30, 263 (2000). DOI: 10.1146/annurev.matsci.30.1.263
  5. H. Liu, H. Wu, Kh.Ph. Ong, T. Yang, P. Yang, P.K. Das, X. Chi, Y. Zhang, C. Diao, W.K.A. Wong, E.P. Chew, Y.F. Chen, Ch.K.I. Tan, A. Rusydi, M.B.H. Breese, D.J. Singh, L.-Q. Chen, S.J. Pennycook, K. Yao. Science, 369, 292 (2020). DOI: 10.1126/science.abb3209
  6. S.B. Anooz, Y.Wang, P. Petrik, M.de Oliveira Guimaraes, M. Schmidbauer, J. Schwarzkopf. Appl. Phys. Lett., 120, 202901 (2022). DOI: 10.1063/5.0087959
  7. A.V. Pavlenko, D.V. Stryukov, N.V. Ter-Oganessian, Tech. Phys. Lett., 46, 62 (2020). DOI: 0.1134/S1063785020010289. DOI: 10.21883/PJTF.2020.02.48946.18063
  8. A.V. Pavlenko, D.V. Stryukov, M.V. Vladimirov, A.E. Ganzha, S.A. Udovenko, A. Joseph, J. Sunil, Ch. Narayana, R.G. Burkovsky, I.P. Raevski, N.V. Ter-Oganessian. arXiv:2112.04579v1[cond-mat.mtrl-sci] 8 Dec 2021
  9. M.A. Bunin, V.A. Yorshin, M.D. Miruschenko, I.A. Donchenko, A.V. Pavlenko, O.A. Bunina, I.P. Raevski. Ferroelectrics, 590 (1), 190 (2022). DOI: 10.1080/00150193.2022.2037950
  10. M.A. Bunin, I.P. Raevskii, Tech.Phys. Lett., 51, 58 (2025). DOI: 10.61011/TPL.2025.01.60140.20026 (2025). DOI: 10.61011/PJTF.2025.02.59548.20026
  11. G.M. Sessler. Physical principles of electrets. In G.M. Sessler (ed). Electrets. Topics in Applied Physics (Springer, Berlin, Heidelberg, 1980), v. 33, p. 13-80. DOI: 10.1007/3540173358_10
  12. Yu.A. Gorokhvatsky, G.A. Bordovsky. Termoaktivatsionnaya tokovaya spektroscopia vysokoomnykh poluprovodnikov i dielektriko (Thermally activated current spectroscopy of high-resistance semiconductors and dielectrics) (Nauka, M., 1991) (in Russian)
  13. F.T. Xu, S.M. Thaler, C.A. Lopez, J.A. Barnard, A. Butera, J.L. Weston. Appl. Phys. Lett., 86, 074105 (2005). DOI: 10.1063/1.1868067
  14. A.N. Pavlov, Yu.A. Trusov, E.M. Panchenko, F.I. Savenko, V.P. Sakhnenko. J. Phys. D: Appl. Phys., 25 1243 (1992). DOI: 10.1088/0022-3727/25/8/015
  15. H. Amjadi, C. Thielemann. IEEE Trans. Dielectr. Electr. Insul., 3, 494 (1996). DOI: 10.1109/94.536727
  16. S.O. Lisitsina, E.M. Panchenko, I.P. Raevskii, Yu.A. Trusov, E.G. Fesenko. J. Electrostat., 24, 295 (1990). DOI: 10.1016/0304-3886(90)90016-o
  17. S.V. Kalinin, Yu. Kim, D.D. Fong, A.N. Morozovska. Rep. Prog. Phys., 81, 036502 (2018). DOI: 10.1088/1361-6633/aa915a
  18. M.D. Glinchuk, A.N. Morozovska, E.A. Eliseev. Ferroelectrics, 335, 257 (2006). DOI: 10.1080/00150190600691593
  19. M.D. Glinchuk, A.N. Morozovska, E.A. Eliseev. J. Appl. Phys., 99, 114102 (2006). DOI: 10.1063/1.2198940
  20. A.K. Tagantsev, G. Gerra. J. Appl. Phys., 100, 051607 (2006). DOI: 10.1063/1.2337009
  21. A.K. Tagantsev, A.S. Yurkov. J. Appl. Phys., 112, 044103 (2012). DOI: 10.1063/1.4745037
  22. J. Wawra, K. Nielsch, R. Huhne. Materials, 16, 6036 (2023). DOI: 10.3390/ma16176036
  23. M. Saghayezhian, Z. Wang, D. Howe, P. Siwakoti, E.W. Plummer, Y. Zhu, J. Zhang. J. Phys.: Condens. Matter., 33, 275003 (2021). DOI: 10.1088/1361-648X/abfdf1
  24. V. Nagarajan, C.L. Jia, H. Kohlstedt, R. Waser, I.B. Misirlioglu, S.P. Alpay, R. Ramesh. Appl. Phys. Lett., 86, 192910 (2005). DOI: 10.1063/1.1922579
  25. Biya Cai, J. Schwarzkopf, C. Feldt. Phys. Rev. B, 95, 184108 (2017). DOI: 10.1103/PhysRevB.95.184108
  26. J. Schwarzkopf, E. Hollmann, D. Braun, M. Schmidbauer, T. Grellmann, R. Wordenweber. Phys. Rev. B, 93, 224107 (2016). DOI: 10.1103/PhysRevB.93.224107
  27. J. Koruza, P. Groszewic, H. Breitzke, G. Buntkowsky, T. Rojac, B. Maliv c. Acta Mater., 126, 77 (2017). DOI: 10.1016/j.actamat.2016.12.049
  28. G. Damamme, C. Guerret-Piecourt, T. Temga, D. Juve, D. Treheux. J. Phys. D: Appl. Phys., 41 (6), 065208 (2008). DOI: 10.1088/0022-3727/41/6/065208
  29. The Materials Project. Electronic source. Available at: https://materialsproject.org/materials/mp-4681/
  30. The Materials Project. Electronic source. Available at: https://materialsproject.org/materials/mp-3671/
  31. C. Villeneuve-Faure, K. Makasheva, L. Boudou, G. Teyssedre. Space Charge at Nanoscale: Probing Injection and Dynamic Phenomena Under Dark/Light Configurations by Using KPFM and C-AFM. In U. Celano (ed.). Electrical Atomic Force Microscopy for Nanoelectronics (Springer, 2019), p. 267-301. DOI: 10.1007/978-3-030-15612-1_9

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