O.V. Aleksandrov1, Mokrushina S. A.1
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: Aleksandr_ov@mail.ru
A quantitative model of the influence of radiation-thermal treatments on the resistance of MOS structures to ionizing radiation has been developed. The model is based on the interaction of holes formed during ionizing irradiation with hydrogen-containing and hydrogen-free traps in the gate dielectric. The capture of holes by hydrogen-containing traps stimulates the breaking of the hydrogen bond and their transformation into hydrogen-free traps with a smaller capture cross section. The model makes it possible to describe the increase in the radiation resistance of MOS structures during successive irradiation-annealing cycles while maintaining the integral concentration of traps. Keywords: MOS structures, radiation-thermal treatments, ionizing radiation, radiation resistance.
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