Boron based x-ray multilayer mirrors for the spectral range 6.7-9 nm
Shaposhnikov R. A.1, Zagaynov N.V.1, Polkovnikov V. N.1, Chkhalo N. I.1, Garakhin S. A.1, Zuev S. Yu.1
1Institute for physics of microstructure RAS, Nizhny Novgorod, Russia
Email: shaposhnikov-roma@mail.ru

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The paper presents the results of a study of the reflective characteristics and structural parameters of multilayer X-ray mirrors based on a pair of Ru/B4C materials, optimized for the spectral range 67-90 Angstrem. A comparison of these structures with Mo/B4C and La/B4C mirrors is presented. Keywords: multilayer X-ray mirrors, synchrotron applications, X-ray monochromators, X-ray lithography.
  1. A. Pirati, J. van Schoot, K. Troost, R. van Ballegoij, P. Krabbendam, J. Stoeldraijer, E. Loopstra, J. Benschop, J. Finders, H. Meiling, E. van Setten, N. Mika, J. Dredonx, U. Stamm, B. Kneer, B. Thuering, W. Kaiser, T. Heil, S. Migura. Proc. SPIE., 10143, 101430G (2017). DOI: 10.1117/12.2261079
  2. N.I. Chkhalo, N.N. Salashchenko. AIP Advances, 3 (8), 082130 (2013). DOI: 10.1063/1.4820354
  3. Electronic media. Available at: https://www.asml.com/en/products/euv-lithography-systems
  4. N.N. Salashchenko, N.I. Chkhalo. Her. Russ. Acad. Sci., 78, 279 (2008). DOI: 10.1134/S1019331608030155
  5. S.S. Churilov, R.R. Kildiyarova, A.N. Ryabtsev, S.V. Sadovsky. Phys. Scr., 80, 045303 (2009). DOI:10.1063/1.3524494
  6. Otsuka, D. Kilbane, J. White, T. Higashiguchi, N. Yugami, T. Yatagai, W. Jiang, A. Endo, P. Dunne, G. O'Sullivan. Appl. Phys. Lett., 97, 111503 (2010). DOI: 10.1063/1.3490704
  7. S. A. Garakhin, V. N. Polkovnikov, N. I. Chkhalo. Poverkhnost. Rentgenovskie, sinkhrotronnye i neytronnye issledovaniya 3, 10 (2019) (in Russian). DOI: 10.1134/S0207352819030077
  8. A.A. Akhsakhalyan, Yu. A. Vayner, S. A. Garakhin, K. A. Elina, P. S. Zavertkin, S. Yu. Zuev, D. V. Ivlyushkin, A. N. Nechay, A.D. Nikolenko, D. E. Paryev, R. S. Pleshkov, V. N. Polkovnikov, N.. N. Salashchenko, M. V. Svechnikov, N. I. Chkhalo. Poverkhnost. Rentgenovskie, sinkhrotronnye i neytronnye issledovaniya 1, 14 (2019) (in Russian). DOI: 10.1134/S0207352819010025
  9. J. K. Lepson, P. Beiersdorfer, J. Clementson, M.F. Gu, M. Bitter, L. Roquemore, R. Kaita, P.G. Cox, A.S. Safronova. J. Phys. B: At. Mol. Opt. Phys., 43, 144018 (2010). DOI: 10.1088/0953-4075/43/14/144018
  10. S.S. Andreev, M.M. Barysheva, N.I. Chkhalo, S.A. Gusev, A.E. Pestov, V.N. Polkovnikov, D.N. Rogachev, N.N. Salashchenko, Yu.A. Vainer, S.Yu. Zuev. Tech. Phys., 55 (8), 168 (2010). DOI: 10.1134/S1063784210080153
  11. N.I. Chkhalo, S. Kunstner, V.N. Polkovnikov, N.N. Salashchenko, F. Schafers, S.D. Starikov. Appl. Phys. Lett., 102, 011602 (2013). DOI: 10.1063/1.4774298
  12. P. Naujok, S. Yulin, N. Kaiser, A. Tunnermann. Proc. SPIE, 9422, 94221K-1 (2015). DOI: 10.1117/12.2085764
  13. D.S. Kuznetsov, A.E. Yakshin, J.M. Sturm, R.W.E. van de Kruijs, E. Louis, F. Bijkerk. Opt. Lett., 40 (16), 3778 (2015). DOI: 10.1364/OL.40.003778
  14. T.D. Nguyen, R. Gronsky, J.B. Kortricht. Mat. Res. Soc. Symp. Proc., 280, (1993). DOI: 10.1557/PROC-280-161
  15. C. Borel, C. Morawe, A. Rommeveaux, C. Huguenot, J.-C. Peffen. Proc. SPIE, 6317, 63170I-1 (2006). DOI: 10.1117/12.678472
  16. Ch. Borel, Ch. Morawe, E. Ziegler, Th. Bigault, J.-Y. Massonnat, J.-Ch. Peffen, E. Debourg. Proc. SPIE, 5918, 591801 (2005). DOI: doi.org/10.1117/12.613873
  17. Qiushi Huang, Yang Liu, Yang Yang, Runze Qi, Yufei Feng, I.V. Kozhevnikov, Wenbin Li, Zhong Zhang, Hui Jiang, Ling Zhang, Aiguo Li, Jie Wang, Zhanshan Wang. Opt. Express, 26 (17), 21803 (2018). DOI: 10.1364/OE.26.021803
  18. I.G. Zabrodin, B.A. Zakalov, I.A. Kaskov, E.B. Klyuenkov, V.N. Polkovnikov, N.N. Salashchenko, S.D. Starikov, L.A. Suslov. Poverkhnost. Rentgenovskie, sinkhrotronnye i neytronnye issledovaniya 7, 37 (2013) (in Russian). DOI: 10.7868/S0207352813070202
  19. M.S. Bibishkin, N.I. Chkhalo, A.A. Fraerman, A.E. Pestov, K.A. Prokhorov, N.N. Salashchenko, Yu.A. Vainer. Nucl. Instrum. Methods Phys. Res. A, 543, 333 (2005). DOI: 10.1016/j.nima.2005.01.251
  20. M.J. Svechnikov. Appl. Crystallogr., 53 (1), 244 (2020). DOI: 10.1107/S160057671901584X
  21. R.M. Smertin, N.I. Chkhalo, V.N. Polkovnikov, N.N. Salashchenko, R.A. Shaposhnikov, S.Yu. Zuev. Thin Solid Films, 782, 140044 (2023). DOI: 10.1016/j.tsf.2023.140044
  22. R. Shaposhnikov, V. Polkovnikov, S. Garakhin, Y. Vainer, N. Chkhalo, R. Smertin, K. Durov, E. Glushkov, S. Yakunin, M. Borisov. J. Synchrotron Rad., 31, 268 (2024). DOI: 10.1107/S1600577524000419
  23. V.E. Asadchikov, I.N. Bukreeva, A. Duparre, I.V. Kozhevnikov, Y.S. Krivonosov, C. Morawed, M.V. Pyatakhin, J. Steinert, A.V. Vinogradov, E. Ziegle. Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II Proceed. V. 4449, (2001). DOI: 10.1117/12.450102
  24. M. Bass. Handbook of Optics, 1, 1 (1995).

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