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Contribution of excitons and free carriers to energy transfer in CdTe/Cd0.6Mg0.4Te quantum wells of different thickness
Agekyan V. F.1, Verbin S.Yu.
1, Serov A.Yu.
1, Filosofov N.G.
1, Komorova O.S.2, Shtrom I.V.
1,3
1St. Petersburg State University, St. Petersburg, Russia
2Baltic State Technical University "VOENMEKH" named after Marshal D. F. Ustinov, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
2Baltic State Technical University "VOENMEKH" named after Marshal D. F. Ustinov, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
Email: v.agekyan@spbu.ru, s.verbin@spbu.ru, a.serov@spbu.ru, n.filosofov@spbu.ru, i.shtrom@spbu.ru
Luminescence excitation spectra of barrier layers and quantum wells in CdTe/Cd0.6Mg0.4Te heterostructure containing four quantum wells with thicknesses of 1.3, 2.6, 5.2, and 10.4 nm have been investigated. The contributions of free carriers and excitons to excitation transfer within the barrier layers and from the barrier layers to the quantum wells, depending on the quantum well thickness and temperature, are discussed. Keywords: CdTe quantum wells, luminescence, luminescence excitation spectra, excitation transfer, exciton.
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