BokhahP.A.1, Zakrevsky Dm.E.
1,2, Malin T.V.1, Fateev N.V.
1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Email: bokhan@isp.nsc.ru, zakrdm@isp.nsc.ru, mal-tv@isp.nsc.ru, fateev@isp.nsc.ru
The properties of stimulated emission in a symmetric Al2O3/AlN/Al0.65Ga0.35N/AlN/Al2O3 heterostructure were experimentally studied in the spectral range λ=350-700 nm at room temperature. The active medium is a symmetric planar waveguide formed by two identical heavily doped Al0.65Ga0.35N/AlN/Al2O3 structures, with their active layers tightly pressed together. The emission was coupled out through the side surface (leaky modes) and through the end face of the structure (guided modes). When optically pumped with λ=266 nm, the structure exhibits amplifying properties with an optical gain of g~41 cm-1 at a pump power density of Pp=460 kW/cm2. The stimulated emission spectrum is a broad band containing peaks due to the mode structure of the emission and the excitation of orthogonally polarized waveguide TE and TM modes. The quantum efficiency of the stimulated emission output is eta~20 %. The angular divergence of the beam is 15o in the plane of the structure and 18o in the perpendicular direction. Keywords: heavily doped AlxGa1-xN structure, symmetric planar waveguide, optical gain, donor-acceptor recombination.
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