Babichev A. V.
1, Makhov I. S.2, Kryzhanovskaya N. V.2, Zadiranov Yu. M.1, Salii Yu. A.1, Kulagina M. M.1, Kovach Ya. N.1,3, Blokhin A. A.1, Bobrov M. A.1, Vasil’ev A. P.1, Blokhin S. A.1, Maleev N. A.1, Karachinsky L. Ya. 3, Novikov I. I.3, Egorov A. Yu.3
1Ioffe Institute, St. Petersburg, Russia
2HSE University, St. Petersburg, Russia
3ITMO University, St. Petersburg, Russia
Email: a.babichev@mail.ioffe.ru
TThe results of implementing lasing at elevated temperatures in lasers based on a vertical microcavity with a wavelength of 980 nm and using mirrors that do not absorb light at the optical pump wavelength are presented. The minimum threshold pump power was ~0.8 mW and corresponded to a temperature of 150 K. The microcavity quality factor, determined at the lasing threshold, exceeded 13000. The maximum operating temperature of the microlaser was 195 K. Increasing the temperature to 195 K led to an increase in the threshold power to 1.7 mW. Keywords: microlasers, vertical microcavity, quantum dots, Stranski-Krastanov mechanism, optical reservoir computing.
- T. Heuser, J. Grose, S. Holzinger, M.M. Sommer, S. Reitzenstein. IEEE J. Sel. Top. Quantum Electron., 26 (1), 1 (2020). DOI: 10.1109/JSTQE.2019.2925968
- T. Heuser, J. Grob e, A. Kaganskiy, D. Brunner, S. Reitzenstein. APL Photonics, 3 (11), 116103 (2018). DOI: 10.1063/1.5050669
- L. Andreoli, X. Porte, T. Heuser, J. Grob e, B. Moeglen-Paget, L. Furfaro, S. Reitzenstein, D. Brunner. Opt. Express, 29 (6), 9084 (2021). DOI: 10.1364/OE.417063
- C.-W. Shih, I. Limame, S. Kruger, C.C. Palekar, A. Koulas-Simos, D. Brunner, S. Reitzenstein. Appl. Phys. Lett., 122 (15), 151111 (2023). DOI: 10.1063/5.0143236
- S.A. Blokhin, A.V. Babichev, A.G. Gladyshev, I.I. Novikov, A.A. Blokhin, M.A. Bobrov, N.A. Maleev, V.V. Andryushkin, D.V. Denisov, K.O. Voropaev, V.M. Ustinov, V.E. Bougrov, A.Y. Egorov, L.Y. Karachinsky. Opt. Eng., 61 (9), 096109 (2022). DOI: 10.1117/1.OE.61.9.096109
- A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, Y. Kovach, A. Kuzmenkov, V. Nevedomsky, N. Maleev, E. Kolodeznyi, K. Voropaev, A. Vasilyev, V. Ustinov, A. Egorov, S. Han, S.-C. Tian, D. Bimberg. Photonics, 10 (6), 660 (2023). DOI: 10.3390/photonics10060660
- A. Skalli, J. Robertson, D. Owen-Newns, M. Hejda, X. Porte, S. Reitzenstein, A. Hurtado, D. Brunner. Opt. Mater. Express, 12 (6), 2395 (2022). DOI: 10.1364/OME.450926
- Z. Chen, A. Sludds, R. Davis, I. Christen, L. Bernstein, L. Ateshian, T. Heuser, N. Heermeier, J.A. Lott, S. Reitzenstein, R. Hamerly, D. Englund. Nat. Photon., 17, 723 (2023). DOI: 10.1038/s41566-023-01233-w
- T. Heuser, M. Pfluger, I. Fischer, J.A. Lott, D. Brunner, S. Reitzenstein. J. Phys. Photonics, 2 (4), 044002 (2020). DOI: 10.1088/2515-7647/aba671
- A. Skalli, X. Porte, N. Haghighi, S. Reitzenstein, J.A. Lott, D. Brunner. Opt. Mater. Express, 12 (7), 2793 (2022). DOI: 10.1364/OME.451524
- M. Pfluger, D. Brunner, T. Heuser, J.A. Lott, S. Reitzenstein, I. Fischer. Opt. Lett., 49 (9), 2285 (2024). DOI: 10.1364/ol.518946
- A. Skalli, M. Goldmann, N. Haghighi, S. Reitzenstein, J.A. Lott, D. Brunner. Commun. Phys., 8 (1), 68 (2025). DOI: 10.1038/s42005-025-01972-y
- A. Babichev, I. Makhov, N. Kryzhanovskaya, A. Blokhin, Y. Zadiranov, Y. Salii, M. Kulagina, M. Bobrov, A. Vasil'ev, S. Blokhin, N. Maleev, M. Tchernycheva, L. Karachinsky, I. Novikov, A. Egorov. IEEE J. Sel. Top. Quantum Electron., 31 (5), 1900208 (2024). DOI: 10.1109/JSTQE.2024.3494245
- K. Gaur, C.-W. Shih, I. Limame, A. Koulas-Simos, N. Heermeier, C.C. Palekar, S. Tripathi, S. Rodt, S. Reitzenstein. Appl. Phys. Lett., 124 (4), 041104 (2024). DOI: 10.1063/5.0177393
- I. Limame, C.-W. Shih, A. Koulas-Simos, J. Pietsch, L.J. Roche, M. Plattner, A. Koltchanov, S. Rodt, S. Reitzenstein. Opt. Express, 32 (18), 31819 (2024). DOI: 10.1364/OE.529679
- A.V. Babichev, S.D. Komarov, Y.S. Tkach, V.N. Nevedomskiy, S.A. Blokhin, N.V. Kryzhanovskaya, A.G. Gladyshev, L.Ya. Karachinsky, I.I. Novikov. Semiconductors, 57, 93 (2023). DOI: 10.1134/S1063782623040012
- A.V. Babichev, A.M. Nadtochiy, S.A. Blokhin, V.N. Nevedsky, N.V. Kryzhanovskaya, M.A. Bobrov, A.P. Vasiliev, N.A. Maleev, L.Ya. Karachinsky, I.I. Novikov, A.Yu. Egorov. FTP, 58 (6), 318 (2024) (in Russian). DOI: 10.61011/FTP.2024.06.58946.6287
- G. Bjork, Y. Yamamoto. IEEE J. Sel. Top. Quantum Electron., 27 (11), 2386 (1991). DOI: 10.1109/3.100877
- B. Monemar, K.K. Shih, G.D. Pettit. J. Appl. Phys., 47 (6), 2604 (1976). DOI: 10.1063/1.322979
- D.E. Aspnes, S.M. Kelso, R.A. Logan, R.J. Bhat. Appl. Phys., 60 (2), 754 (1986). DOI: 10.1063/1.337426
- M. Sturge. Phys. Rev., 127 (3), 768 (1962). DOI: 10.1103/physrev.127.768
- S. Adachi. Physical properties of III-V semiconductor compounds (John Wiley \& Sons., Hoboken, NJ, U.S., 1992). DOI: 10.1002/352760281x
- K. Gaur, S. Tripathi, F. Laudani, A. Barua, I. Limame, A. Koulas-Simos, S. Rodt, S. Reitzenstein. Laser Photonics Rev., 19 (18), e00533 (2025), DOI: 10.1002/lpor.202500533
- N. Heermeier, T. Heuser, J. Grob e, N. Jung, A. Kaganskiy, M. Lindemann, N.C. Gerhardt, M.R. Hofmann, S. Reitzenstein. Laser Photonics Rev., 16 (4), 2100585 (2022). DOI: 10.1002/lpor.202100585
- A. Babichev, I. Makhov, N. Kryzhanovskaya, S. Troshkov, Y. Zadiranov, Y. Salii, M. Kulagina, M. Bobrov, A. Vasil'ev, S. Blokhin, N. Maleev, L. Karachinsky, I. Novikov, A. Egorov. IEEE J. Sel. Top. Quantum Electron., 31 (2), 1502808 (2024). DOI: 10.1109/JSTQE.2024.3503724
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.