Study of the temperature dependence of the light-voltage-current characteristics of silicon heterojunction solar cells
Terukov E. I.
1,2,3,4, Ataboev O. K. 5, Malevskiy D. A. 1, Panaiotti I. E. 1, Kochergin A. V. 3, Shakhray I. S.4
1Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
3R&D Center of Thin Film Technologies in Energetics under the Ioffe Institute LLC, St. Petersburg, Russia
4St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
5Research Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan
Email: e.terukov@hevelsolar.com, omonboy12@mail.ru, dmalevsky@scell.ioffe.ru, panaiotti@mail.ioffe.ru, tem47@mail.ru, i.shakhray@hevelsolar.com
A study of the temperature dependence of the light volt-ampere characteristics of silicon heterojunction solar cells made on n- and p-type silicon substrates in a wide temperature range (from -100 to +100 oC) has been carried out. The observed difference in the behavior of the light volt-ampere characteristics is explained by the peculiarities of the energy band diagrams of the silicon heterojunction solar cells. Keywords: silicon solar cell, heterojunction solar cells, temperature dependence of the current-voltage characteristics, S-shaped current-voltage characteristics.
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