Rotation angle sensor based on a one-dimensional photonic crystal with a defect
Sidorov A. I.1,2, Efimov A. A. 2
1 ITMO University, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: sidorov@oi.ifmo.ru
The results of numerical simulation of the optical properties of a one-dimensional (1D) photonic crystal with a defect based on semiconductor-dielectric layers in the near-IR range are presented. The simulations used layers of silicon and silicon dioxide with optical thicknesses 3λ/4, λ/4 and 10λ/4. The influence of radiation incident angle on the spectral position of the defect's guidance band has been studied. It is shown that the sensitivity to the rotation angle lies within the limits of 6-20 nm/deg and 1.7-5.5 dB/deg, depending on the geometry of the sensor and the measurement method. This makes these photonic crystals promising for use in the rotation angle sensors as a sensitive element. Keywords: rotation angle sensor, incident angle, photonic crystal, photonic band gap, transfer matrix.
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