Temperature sensor on base of pne-dimensional photonic crystal with defect
Sidorov A. I.1,2, Vidimina Yu. O.2
1 ITMO University, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: sidorov@oi.ifmo.ru, uvidimina@gmail.com

PDF
The results of computer simulation of optical properties of one-dimensional (1D) photonic crystal with defect, based on semiconductor-dielectric layers are presented. As semiconductor silicon and germanium were used. The influence of temperature on spectral position of defect transmission band was studied. It was shown that for photonic crystal based on silicon temperature sensitivity is 0.07 nm/K and 2.6 dB/K. For photonic crystal based on germanium - 0.37 nm/K and 7.8 dB/K. This makes such photonic crystals promising for use in temperature sensors as sensitive element. Keywords: temperature sensor, photonic crystal, photonic bandgap, transfer matrix.
  1. X. Wang, O.S. Wolfbeis, R.J. Meier. Chem. Soc. Rev. 42, 7834-7869 (2013). DOI: 10.1039/c3cs60102a
  2. G. Adamovsky, N.D. Piltch Appl. Opt. 25, 4439-4443 (1986). DOI: 10.1364/AO.25.004439
  3. T. Wei, Y. Han, Y. Li, H.L. Tsai. Opt. Expr. 16, 5764-5769 (2008). DOI: 10.1364/OE.16.005764
  4. S. Gao, C. Ji, Q. Ning, W. Chen, J. Li. Opt. Fiber Technol., 56, 102202 (2020). DOI: 10.1016/j.yofte.2020.102202
  5. M. Radhouene, M. Kumar, C.M. Najjar, S. Robinson, B. Suthar Phot. Sens., 7, 311-316 (2017). DOI: 10.1007/s13320-017-0443-z
  6. F. Rabbi, M.T. Rahman, A. Khaleque, M. Rahman. Sens. Bio-Sens. Res. 31, 100396 (2021). DOI: 10.1016/j.sbsr.2021.100396
  7. Z. Baraket, J. Zaghdoudi, M. Kanzari. Opt. Mater., 64, 147-151 (2017). DOI: 10.1016/j.optmat.2016.12.005
  8. E. Chehura, S.W. James, R.P. Tatam Opt. Comm., 275, 344-347 (2007). DOI: 10.1117/12.835132
  9. C.J. Wu, Z.H. Wang Progr. Electromagn. Res. 103, 169-184 (2010). DOI: 10.2528/PIER10031706
  10. V. Tolmachev, T. Perova, K. Berwick. Appl. Opt., 42, 5679-5683 (2003). DOI: 10.1364/AO.42.005679
  11. A.N. Kamalieva, N.A. Toropov, T.A. Vartanyan, M.A. Baranov, P.S. Parfenov, K.V. Bogdanov, Y.A. Zharova, V.A. Tolmachev. Semicond., 52, 632-635 (2018). DOI: 10.21883/FTP.2018.05.45862.51
  12. H.T. Hsu, C.J. Wu. Progr. Electromagn. Res., 9, 101-107 (2009). DOI: 10.2528/PIER109032803
  13. Y.-H. Chang, Y.-Y. Jhu, C.-J. Wu. Opt. Comm., 285, 1501-1504 (2012). DOI: 10.1016/j.opt.com.2011.10.053
  14. A.I. Sidorov, L.A. Ignatieva. Optik., 245, 167685 (2021). DOI: 10.1016/j.ijleo.2021.167685
  15. F. Segovia-Chaves. Optik., 231, 166408 (2012). DOI: 10.1016/j.ijleo.2021.166408
  16. E.D. Palik Handbook of optical constants of solids. V. 3. (Academic press, San Diego. 1998)
  17. V.V. Gavrushko, A.S. Ionov, V.A. Lastkin, I.S. Telina. J. Phys.: Conf. Ser. 1658. 012016 (2020). DOI: 10.1088/1742-6596/1658/1/012016
  18. M. Born, E. Wolf. Principles of optics: electromagnetic theory of propagation, interference and diffraction of light. (Cambridge University Press, 2000)
  19. D.S. Agafonova, E.V. Kolobkova, A.I. Sidorov. Techn. Phys. Lett. 39, 629-631 (2013). DOI: 10.1134/S1063785013070158

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru