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Photoinduced State of Floquet Insulator in Graphene-like Crystal
Russian version
DOI: 10.21883/TP.2022.03.53255.280-21
Kukhar E. I. 1, Kryuchkov S. V. 2,3
1Volgodonsk Engineero-Technological Institute of the National Research Nuclear University MEPhI, Volgodonsk, Russia
2Volgograd State Socio-Pedagogical University, Volgograd, Russia
3Volgograd State Technical University, Volgograd, Russia
Email: eikuhar@yandex.ru, svkruchkov@yandex.ru
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Floquet spectrum of charge carriers in a 2D-crystal with initially displaced Dirac points has been derived. The phase and amplitude dependences of the energy gap induced by elliptically polarized and bichromatic high-frequency fields has been investigated. In contrast to graphene the linearly polarized electric field has been shown to be able to transform the initially semi-metallic state of Dirac crystal into the Floquet-insulator state. The conditions for such a transition are indicated, one of which is the mismatch between the orientation of the field polarization line and the direction of the crystallographic axes. Keywords: Floquet Spectrum, Quasienergy, Dirac Crystal, Semi-Dirac Crystal, Graphene, Floquet Topological Insulator.
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