We present studies of one- and two-stage growth of GaInP nanostructures on (111)-oriented silicon substrates from saturated phosphorus and indium vapors in a quasi-closed volume. Growth was achieved sequentially by formation of a primary nucleation layer consisting of GaInP nanostructures on a silicon substrate, followed by additional gallium deposition. Studies of the vibrational properties and photoluminescence spectra revealed that the second stage of the process, using additional deposition of a metal catalyst layer and various sources, allows for the obtaining structures with a composition different from that of the nucleation layer. Photoluminescence mapping measurements revealed that the two-stage growth method significantly improves the compositional homogeneity of the nanostructures compared to a single-stage approach, and also demonstrates the relationship between the morphology and the composition of the primary and secondary layers. Keywords: GaInP nanostructures, self-catalytic vapor-phase growth, III-V on Si.