Radiative properties of structures with two-dimensional photonic crystals with an unprocessed central region
Yablonskiy A.N.1, Zakharov V.E.1, Yurasov D.V.1, Shaleev M.V.1, Shengurov D.V.1, Rodyakina E.E.2, Smagina Zh.V.2, Novikov A.V.1,3
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3Lobachevsky State University, Nizhny Novgorod, Russia
Email: yablonsk@ipmras.ru
Using structures with Ge(Si) nanoislands, the effect of two-dimensional photonic crystals (PhCs) with an unprocessed central region (UCR) on the luminescence properties of light-emitting semiconductor structures was studied. Using high spatial- and spectral-resolution microphotoluminescence spectroscopy, the dependence of the emission intensity and spectral characteristics on the location of the excitation region in such PhCs was investigated. A significant increase in the integral emission intensity was demonstrated upon excitation of charge carriers at the center of the UCR compared to excitation in the periodic region of the PhC. A study of the PL spectra of PhCs with various parameters revealed that this increase is due to the efficient extraction of emission near the boundary of the UCR and the periodic region of the PhC due to its interaction with PhC modes. It was found that the maximum gain in the integral emission intensity of PhCs with UCR compared to spatially uniform PhCs is observed at low optical excitation levels, which is associated with a higher concentration of nonradiative recombination centers in the uniform PhCs. At the same time, at high optical pumping levels, due to the partial saturation of nonradiative recombination centers and the effective interaction of the emission from Ge(Si) islands with high-Q modes of the PhCs, the emission intensity of the uniform PhCs at wavelengths corresponding to these modes can significantly exceed the emission intensity of PhCs with UCR. The obtained results can be used for the development of near-IR radiation sources for silicon-based photonic integrated circuits.. Keywords: Ge(Si) nanoislands, two-dimensional photonic crystals, microphotoluminescence spectroscopy, nonradiative recombination, bound states in the continuum (BIC).
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