Semiconductors
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Anisotropy of polarization of interband photoluminescence in n-InAs induced by electric field
Adamov R. B.
1, Vinnichenko M. Ya.
1, Kharin N. Yu.
1, Karaulov D.A.
1, Firsov D. A.
1
1Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: roma.adamow@gmail.com, mvin@spbstu.ru, harin_nyu@spbstu.ru, donil793@yandex.ru, dmfir@rphf.spbstu.ru
The degree of linear polarization of interband photoluminescence in an InAs crystal doped with donors in an electric field was calculated. The polarization anisotropy arises due to the anisotropy of the electron distribution function over states in momentum space, associated with the electron drift in the electric field, and the dependence of the optical matrix elements on the angle between the polarization vector and the electron wave vector. A quasi-equilibrium distribution function shifted in velocity space was used. The electron temperature was determined from the power balance equation. The effect of nonequilibrium phonon accumulation was taken into account in calculating the rate of energy loss by hot electrons. The nonparabolicity of the conduction band was taken into account using the Kane dispersion law. Keywords: distribution function anisotropy, interband photoluminescence, polarization anisotropy, electron temperature.
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