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- 2022
Interaction of silicon carbide with silicon melt formed under conditions of direct bonding of epitaxial structures of 3C-SiC/Si and 6H-SiC wafers
Mynbaeva M. G.
1, Lebedev S. P.
1, Mясоедов A.В.
1, Priobrazhenskii S. Iu.
1, Amelchuk D. G.
1
1Ioffe Institute, St. Petersburg, Russia
Email: mgm@mail.ioffe.ru, lebedev.sergey@mail.ioffe.ru, amyasoedov88@gmail.com, sergei.prioby@mail.ioffe.ru, amelchuk.dmitriy@mail.ioffe.ru
The article presents the results of a study of the processes occurring at the interphase boundaries under conditions of the transfer of 3C-SiC epitaxial layers from Si substrates to 6H-SiC wafers by the direct bonding method. It is shown that the bonding is ensured by the formation of an intermediate layer of silicon melt. The source of the melt is the silicon substrate of the starting 3C-SiC/Si structures. The effects of the interaction of SiC with the Si melt are studied. The requirements for the properties of the initial materials are determined with the ultimate goal of obtaining of 3C-SiC/6H-SiC templates for homo polytype growth of 3C-SiC by sublimation method. Keywords: Silicon carbide, polytypism, 3C-SiC, Si melt, direct bonding.
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