A detailed study of α-Ga₂O₃ epitaxial layers grown by halide vapor phase epitaxy has been carried out both before and after P and Ta and molecular PF₄ ion bombardment to doses as high as 45 dpa. A wide range of complementary analytical techniques were used: X-ray diffraction, atomic force microscopy, Rutherford backscattering spectrometry in channeling mode and X-ray photoelectron spectroscopy. Completely amorphous layer is formed from the surface to the crystal bulk as a result of irradiation. Monatomic P and Ta ions form thicker amorphous layer than molecular PF₄ ions. Small step appears at the border between virgin and irradiated areas of the sample revealing sample swelling (~7 nm after irradiation to 45 dpa). The root mean square roughness of the α-Ga₂O₃ surface remains approximately unchanged (0.7 to 0.5 nm) after irradiation to a dose up to 45 dpa, regardless of the ion kind. The smoothing of small scale topography (reflecting atomic steps) due to irradiation-induced amorphization of the sub-surface layer is found, whereas the large scale topography remains virtually unchanged. Ion bombardment leads to surface layer decomposition with oxygen loss and partial reduction of gallium to Ga⁰ and Ga⁺ states. Keywords: gallium oxide, α-Ga₂O₃, ion bombardment, high-dose irradiation, modification of sub-surface layers, ion radiation effects, Surface topography, structural defects, X-ray photoelectron spectroscopy, AFM.

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Дата начала обработки статистических данных - 27 января 2016 г.