Technical Physics Letters
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Effect of nickel catalyst carburization on carbon nanotube growth on silicon substrates
Filatov L. A.
1, Balashova K. A.
1, Ezhov I.S.1, Nazarov D.V.
2, Markov L. K.
3, Maximov M.Yu.
1
1Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
Email: balldr@mail.ru, balashova.ka@edu.spbstu.ru, iezhov1994@gmail.com, dennazar1@yandex.ru, maximspbstu@mail.ru
This work proposes atomic layer deposition of a thin NiO layer as the catalyst source for carbon nanotube growth. Samples with NiO thickness from 1.5 to 3.5 nm were considered. Silicon substrates with their native oxide layer were used. Carbon nanotube arrays were deposited using plasma-enhanced chemical vapor deposition. The resulting arrays exhibited either short nanotube length or low nanotube density. The addition a nickel film carburization step during the treatment phase significantly improved these array characteristics. This process can be easily implemented in any chemical vapor deposition system. Keywords: Carbon nanotubes, catalyst, carburization, carbon layer.
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